MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
G080P06T


60V 195A 6.3m@10V 4V 1PCSPChannel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GOFORD 0
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AUD 1.0312

Multiples of: 1

                   
DMT10H009LPS-13


MOSFETs MOSFET BVDSS: 61V-100V
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Diodes Incorporated 0
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AUD 1.0312

Multiples of: 1

                   
BSZ0907ND


MOSFET
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Infineon 0
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AUD 1.0312

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AOT460


60V 85A 7.5mO@10V,30A 268W N Channel TO-220 MOSFETs ROHS
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Alpha & Omega 0
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AUD 1.0314

Multiples of: 1

                   
SIR4606DP-T1-GE3


MOSFET N-CHANNEL 60-V (D-S) MOSFET
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Vishay 0
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AUD 1.0317

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40 A30 V4.9 mOhmsN - Channel 2.4 V- 55 C+ 175 C48 WSMD/SMTPOWERPAK SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V54 nCEnhancement  
CS7N70A4R-G


700V 7A 120W 1.15O@10V,3.5A N Channel TO-252 MOSFETs ROHS
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Huajing 0
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AUD 1.0321

Multiples of: 1

                   
TK8A60W5,S5VX


X35 PB-F POWER MOSFET TRANSIST
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Toshiba 0
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AUD 1.0322

Multiples of: 50

8 A600 V440 mOhmsN - Channel 3 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V22 nCEnhancement Dtmosiv
TJ60S04M3L,LXHQ


MOSFET 90W 1MHz Automotive; AEC-Q101
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Toshiba 0
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AUD 1.0323

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60 A40 V6.3 mOhmsP - Channel 3 V + 175 C90 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 10 V125 nCEnhancementAEC - Q101 
BSZ0910NDXTMA1


MOSFET DIFFERENTIATED MOSFETS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.0325

Multiples of: 5000

25 A30 V9.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C31 WSmd/SmtPG - WISON - 8Cut TapeSi1 Channel10 V4 nCEnhancement  
IRLH7134TRPBF


International Rectifier 40V 50A 3.3mOhm 39nC Qg Logic Level
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 1.0326

Multiples of: 1

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