MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON7244


MOSFET N-CH 60V 20A 8DFN
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.9612
Multiples of: 3000

           -       
BSO072N03S


MOSFET N-CH 30V
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AUD 0.9612
Multiples of: 695

12 A30 V6.8 mOhmsn - channel20 V - 55 C+ 150 C1.56 Wsmd/smtDSO - 8Reel    enhancement  
BSO303SP H


MOSFET P-Ch -30V -9.1A DSO-8 OptiMOS P
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.9612
Multiples of: 1

9.1 A30 V21 mOhmsp - channel  - 55 C+ 150 C2.5 Wsmd/smtPG - DSO - 8Reelsi1 channel20 V- 40 nCenhancement optimos
IPB80P04P4L-08


Infineon Technologies MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
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AUD 0.9616
Multiples of: 1

- 80 A- 40 V7.9 mOhmsp - channel  - 55 C+ 175 C75 Wsmd/smtD2PAK - 3Reelsi1 channel16 V71 nC aec - q101optimos
FDS4141_F085


Fairchild Semiconductor MOSFET -40V P-Channel PowerTrench
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ON Semiconductor 0
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AUD 0.9616
Multiples of: 1

- 10.8 A- 40 V14.8 mOhmsp - channel20 V - 55 C+ 150 C1.6 Wsmd/smtSOIC - 8Reelsi1 channel20 V35 nC  powertrench
BSC12DN20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
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AUD 0.9208
Multiples of: 1

   N Channel               
SIZ790DT-T1-GE3


MOSFET 30V 16A / 35A Dual N-Ch MOSFET
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AUD 0.9623
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPowerpair 6 mm x 3.7 mmReelsi     trenchfet
6N80L-TF3-T


MOSFET N Trench 800V 6A (Tc) 5V @ 250uA 2 Ω @ 3A,10V TO-220F (TO-220IS) RoHS
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AUD 0.9624
Multiples of: 1

                   
BSC072N03LD G


MOSFET OptiMOS 3 PWR TRANST 30V 20A
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AUD 0.9626
Multiples of: 1

20 A30 V6 mOhms , 6 mOhmsn - channel 1 V- 55 C+ 150 C57 Wsmd/smtTDSON - 8Reelsi2 channel20 V41 nC , 41 nCenhancement optimos
SISH112DN-T1-GE3


MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
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AUD 0.9627
Multiples of: 1

17.8 A30 V7.5 mOhmsN - Channel 600 mV- 50 C+ 150 C3.8 WSmd/SmtPOWERPAK - 1212 - 8SHCut TapeSi1 Channel12 V27 nCEnhancement Trenchfet, Powerpak
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