MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MTD2955E


MOSFET TO-252 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.9372
Multiples of: 1

                   
SIF12N60C


TO-220FPL-TU-HF MOSFETs ROHS
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SI 0
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AUD 0.9372
Multiples of: 1

                   
NDF08N50ZH


N-Channel 500 V 8.5A (Tc) 35W (Tc) Through Hole TO-220-2 Full Pack
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ON Semiconductor 0
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AUD 0.9372
Multiples of: 713

8.5 A500 V0.85 Ohmsn - channel     through holeTO - 220FP - 3        
NTTFS4840NTAG


MOSFET NFET U8FL 30V 26A 24MO
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ON Semiconductor 0
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AUD 0.9372
Multiples of: 713

26 A30 V24 mOhmsn - channel     smd/smtWDFN - 8Reel       
IRF7450TRPBF


Transistor: N-MOSFET; unipolar; 30V; 2.5A; 3W; SO8
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Infineon 0
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AUD 0.9372
Multiples of: 4000

2.5 A200 V170 mOhmsN - Channel 5.5 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel30 V26 nCEnhancement  
SIR644DP-T1-GE3


Vishay Semiconductors MOSFET 40V 2.7mOhm60A 60A N-CH
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Vishay 0
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AUD 0.9374
Multiples of: 1

60 A40 V2.7 mOhmsn - channel 2.2 V- 55 C+ 150 C69 Wsmd/smtSO - 8Reelsi1 channel20 V47 nCenhancement thunderfet trenchfet
AUIRLR2905Z


Transistor: N-MOSFET; unipolar; 55V; 13.5A; 110W; DPAK
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Infineon 0
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AUD 0.9374
Multiples of: 75

60 A55 V22.5 mOhmsN - Channel16 V - 55 C 110 WSmd/SmtDPAK - 3Tube   23 nCEnhancement  
IRFD123PBF


N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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Vishay 0
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AUD 0.9377
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleHEXDIP - 4TubeSi      
SIHU6N80E-GE3


MOSFET 650V Vds 30V Vgs TO-247AD
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Vishay 0
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AUD 0.9377
Multiples of: 1

5.4 A800 V820 mOhmsN - Channel 2 V- 55 C+ 150 C78 WThrough HoleTO - 251 - 3TubeSi1 Channel10 V22 nCEnhancement  
TSM020N04LCR RLG


MOSFET 40V, 170A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 0
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AUD 0.9377
Multiples of: 1

170 A 1.5 mOhmsN - Channel 1 V- 55 C+ 150 C104 w , 2.6 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V150 nCEnhancement  
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