MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF840BPBF-BE3


N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 0.9237

Multiples of: 1

          TO - 220 - 3TubeMosfet (Metal Oxide)      
FQP50N06L


MOSFET 60V N-Channel QFET Logic Level
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ON Semiconductor 0
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AUD 0.9237

Multiples of: 43

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
SiHP8N50D-GE3


MOSFET 500V 8A 850mOhm @ 10V
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AUD 0.9237

Multiples of: 1

8.7 A500 V850 mOhmsN - Channel 5 V- 55 C+ 150 C156 WThrough HoleTO - 220BulkSi1 Channel30 V15 nCEnhancement  
SI4848DY-T1


150V 5.4A 5.9W 90mO@10V,5A N Channel SO-8 MOSFETs ROHS
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AUD 0.924

Multiples of: 1

                   
IRF6201TRPBF


Transistor: N-MOSFET; unipolar; 20V; 27A; 2.5W; SO8
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Infineon 0
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AUD 0.924

Multiples of: 1

27 A20 V2.45 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V130 nC   
SIR418DP-T1-GE3


Vishay Semiconductors MOSFET 40V 40A 39W 5.0mohm 10V
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AUD 0.9243

Multiples of: 3000

40 A40 V5 mOhmsN - Channel  - 55 C+ 150 C39 WSmd/SmtSO - 8ReelSi 20 V24 nC  Trenchfet, Powerpak
TPB65R600M


650V 7A 530mO@10V,3.5A 28W N Channel TO-263-2 MOSFETs ROHS
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AUD 0.9245

Multiples of: 1

                   
FQI5N60CTU


Fairchild Semiconductor MOSFET 600V N-Channel Adv Q-FET C-Series
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AUD 0.9246

Multiples of: 1

4.5 A600 V2.5 Ohmsn - channel30 V - 55 C+ 150 C3.13 Wthrough holeTO - 264 - 3Tubesi1 channel30 V enhancement  
IPD053N08N3G-VB


80V 5.5m@10V 2.89V 1PCSNChannel TO-252 MOSFETs ROHS
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AUD 0.9249

Multiples of: 1

                   
BUK9Y2R4-40HX


BUK9Y2R4-40H/SOT669/LFPAK
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AUD 0.9249

Multiples of: 1500

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