MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA65R600E6


N-Channel 650 V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-3-111
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 485
Ships to you
between Wed. 16 Sep to Fri. 18 Sep
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AUD 1.0764

Multiples of: 1

7.3 A650 V540 mOhmsN - Channel  - 55 C+ 150 C28 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V23 nC  Coolmos
DMT10H032LDV-7


MOSFET, DUAL N-CH, 18A, 100V, 150DEG C
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.9148

Multiples of: 1

                   
IRF9530SPBF


P-Channel 100 V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 0
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AUD 0.915

Multiples of: 50

12 A100 V300 mOhmsP - Channel 2 V- 55 C+ 175 C88 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V38 nCEnhancement  
UTT50P06L


TO-220 MOSFETs ROHS
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Unisonic 0
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AUD 0.9155

Multiples of: 1

                   
IRFR5305TRPBFBL


Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK T/R
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Infineon 0
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AUD 0.9159

Multiples of: 2000

                   
IRFR5305TRLPBFBL


Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK T/R BL
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Infineon 0
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AUD 0.9159

Multiples of: 3000

                   
FQB30N06LTM


60V 49A 1PCSNChannel D2PAK MOSFETs ROHS
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Tokmas 0
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AUD 0.9159

Multiples of: 1

                   
JCS12N65FT-220MF


MOSFET N Trench 650V 12A (Tc) 5V @ 250uA 780 mΩ @ 6A,10V TO-220MF RoHS
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Jilin 0
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AUD 0.9159

Multiples of: 1

                   
SI7421DN-T1-E3


MOSFET 30V 9.8A 3.6W 25mohm @ 10V
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Vishay 0
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AUD 0.9161

Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
CSD17573Q5B


Texas Instruments MOSFET 30V, N-channel NexFET Pwr MOSFET
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Texas Instruments 0
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AUD 0.9165

Multiples of: 1

332 A30 V1.45 mOhmsN - channel 1.1 V- 55 C+ 150 C195 WSmd/smtVSON - CLIP - 8ReelSi1_Channel+/- 20 V49 nCEnhancement Nexfet
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