MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP85T15


85V 150A 3.2m@10V,75A 210W 3.2V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 0
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AUD 0.897

Multiples of: 1

                   
G230P06F


60V 42A 18m@10V 4V 1PCSPChannel TO-220F MOSFETs ROHS
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GOFORD 0
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AUD 0.8972

Multiples of: 1

                   
TK33S10N1L,LXHQ


MOSFET PD=40W F=1MHZ AEC-Q101
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Toshiba 0
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AUD 0.8975

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33 A100 V9.7 mOhmsN - Channel 2.5 V- 55 C+ 175 C125 WSMD/SMTDPAK - 3Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V33 nCEnhancementAEC - Q101 
SI4151DY-T1-GE3


MOSFET P-CHANNEL 30-V MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.8975

Multiples of: 1

20.5 A30 V7.5 mOhmsP - Channel 2.5 V- 55 C+ 150 C5.6 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V28 nCEnhancement  
RD3P050SNFRATL


MOSFET Nch 100V Vdss 5A ID TO-252(DPAK); TO-252
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ROHM 0
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AUD 0.8596

Multiples of: 1

5 A100 V190 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V14 nCEnhancementAEC - Q101 
TK10A60D(STA4,Q,M)


MOSFET MOSFET N-ch 600V 10A
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Toshiba 0
6 to 16 Weeks Calender.png

AUD 0.8983

Multiples of: 1

10 A600 V750 mOhmsN - Channel 2 V + 150 C45 WThrough HoleTO - 220 - 3 FP Si1 Channel10 V25 nCEnhancement Dtmosiv
IPD60R600E6


MOSFET N-Ch 650V 7.3A DPAK-2 CoolMOS E6
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Infineon 0
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AUD 0.8983

Multiples of: 1

7.3 A600 V540 mOhmsn - channel  - 55 C+ 150 C63 Wsmd/smtTO - 252Reelsi1 channel20 V   coolmos
STF4LN80K5


MOSFET POWER MOSFET
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STMicroelectronics 0
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AUD 0.8984

Multiples of: 1

3 A800 V2.1 Ohmsn - channel 3 V- 55 C+ 150 C20 Wthrough holeTO - 220FP - 3Tubesi1 channel30 V3.7 nCenhancement mdmesh
DMNH6021SPD-13


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.8985

Multiples of: 1

8.2 A60 V15 mOhmsN - Channel 1 V- 55 C+ 175 C2.8 WSmd/SmtPowerdi5060 - C - 8Cut TapeSi2 Channel20 V20.1 nC , 20.1 nCEnhancement  
WML10N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 8A; 27W; TO220F
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Wayon 0
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AUD 0.8985

Multiples of: 1

            Sj - Mosfet C2      
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