MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB13AN06A0-VB


60V 75A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8906
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SUB85N03-07P-GE3-VB


30V 98A 3.8m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 0.8906
Multiples of: 1

                   
IRL7833SPBF-VB


30V 180A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8906
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TSF20N50M


MOSFET N Trench 500V 20A (Tc) 4V @ 250uA 280 mΩ @ 20A,10V TO-220F RoHS
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Truesemi 0
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AUD 0.8906
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RJK0346DPA-VB


30V 3m@10V 1.79V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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AUD 0.891
Multiples of: 1

                   
SQJ200EP-T1_GE3


MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified
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Vishay 0
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AUD 0.8912
Multiples of: 1

20 A , 60 A20 v , 20 V12.4 mOhms , 6.3 mOhmsN - Channel, Npn 1 v , 1 V- 55 C+ 175 C27 w , 48 WSmd/SmtPOWERPAK - DUAL - 8ReelSi2 Channel+/- 20 v , +/- 20 V12 nC , 29 nCEnhancementAec - Q101Trenchfet
IRL3803VPBF


Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; TO220AB
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Infineon 0
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AUD 0.8913
Multiples of: 20

140 A30 V7.5 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V50.7 nC   
IPP45P03P4L-11


MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2
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Infineon 0
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AUD 0.8914
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45 A30 V18.7 mOhmsp - channel 1 V- 55 C+ 175 C58 Wthrough holeTO - 220 - 3 FPTubesi1 channel- 4.5 V42 nCenhancement optimos
SPP18P06P


MOSFET P-Ch -60V 18.7A TO220-3
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Infineon 0
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AUD 0.8914
Multiples of: 1

18.7 A60 V130 mOhmsp - channel  - 55 C+ 175 C81.1 Wthrough holeTO - 220 - 3Tubegan1 channel20 V enhancement  
NTD6415ANT4G


MOSFET NFET DPAK 100V 25A 55MO
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ON Semiconductor 0
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AUD 0.8914
Multiples of: 1

23 A100 V55 mOhmsn - channel20 V - 55 C+ 175 C83 Wsmd/smtDPAK - 3Reel   29 nC   
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