MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7380QTRPBF-VB


- MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 14
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AUD 0.8436
Multiples of: 1

                   
FDP5N60NZ


MOSFET 600V N-Channel MOSFET, UniFET-II
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ON Semiconductor 0
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AUD 0.8432
Multiples of: 1

4.5 A600 V1.65 Ohmsn - channel 5 V  100 Wthrough holeTO - 220Tubesi1 channel25 V10 nC  unifet
IRLZ44ZPBF


MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB
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Infineon 0
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AUD 0.8432
Multiples of: 1000

   N - Channel     Through HoleTO - 220 - 3Tube       
SIRA58DP-T1-GE3


MOSFET 40V Vds 60A Id 0.00265Vgs Rds(On)
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Vishay 0
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AUD 0.8433
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60 A40 V2.2 mOhmsn - channel 1.1 V- 55 C+ 150 C27.7 Wsmd/smtSO - 8Reelsi1 channel- 16 v , + 20 V75 nCenhancement trenchfet, powerpak
IRFU15N20DPBF


Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; IPAK
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Infineon 0
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AUD 0.8438
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            hexfet®      
2SJ529STL


60V 30A 4W 61mO@10V,5A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8441
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AGM40P150C


TO-220 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.8441
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SI7317DN-T1-GE3


MOSFET -150V 1.2ohm@-10V -2.8A P-Ch T-FET
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Vishay 0
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AUD 0.8446
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- 2.8 A- 150 V1.05 OhmsP - Channel - 4.5 V- 55 C+ 150 C19.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel30 V6.5 nCEnhancement Trenchfet
SI4850EY-T1-GE3


MOSFET 60V 8.5A 3.3W 22mohm @ 10V
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Vishay 0
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AUD 0.8451
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
IRFR120ZTRLPBF


MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
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Infineon 0
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AUD 0.8451
Multiples of: 1

8.7 A100 V190 mOhmsn - channel    35 Wsmd/smtDPAKReelsi1 channel20 V6.9 nC   
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