MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFD113PBF


MOSFET 60V 800mOhm@10V 0.8A N-Ch
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AUD 0.8166

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         Through HoleHVMDIP - 4BulkSi      
SE120120GA


MOSFET N Trench 120V 129A 4.5V @ 250uA 6.1 mΩ @ 60A,10V TO-220 RoHS
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AUD 0.8168

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IRF6215STRRPBF


Trans MOSFET P-CH 150V 13A 3-Pin(2+Tab) D2PAK T/R
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AUD 0.817

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13 A150 V290 mOhmsP - Channel 4 V- 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V44 nCEnhancement  
FDD24AN06LA0_F085


Fairchild Semiconductor MOSFET 60V, 36A, N Chan Logic Lvl PowerTrnch
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AUD 0.817

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7.1 A60 V19 mOhmsn - channel20 V - 55 C+ 175 C75 Wsmd/smtDPAK - 2Reelsi1 channel20 V enhancement  
IRFD911PBF


Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
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AUD 0.817

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APM4050PUC


40V 50A 12mO@10V,50A P Channel TO-252 MOSFETs ROHS
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AUD 0.817

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SI4916DY-T1-GE3


MOSFET 30V 1010.5A 18mohm 10V
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AUD 0.8172

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7.5 A30 V18 mOhmsN - Channel20 V - 55 C+ 150 C1.9 w , 2 WSmd/SmtSOIC - 8 NarrowReel       
IRFH8324TR2PBF


MOSFET MOSFT 30V 50A 4.1mOhm 15nC Qg
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AUD 0.8172

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23 A30 V4.1 mOhmsN - Channel20 V - 55 C+ 150 C3.6 WSmd/SmtPQFN - 8Reel   14 nCEnhancement  
NCE01H13


MOSFET N Trench 100V 130A (Tc) 4V @ 250uA 6.8 mΩ @ 20A,10V TO-220 (TO-220-3) RoHS
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AUD 0.8175

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SI9435BDY


MOSFET P-CHANNEL 30-V (D-S) MOSFET
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AUD 0.8177

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