MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR9120NTRR


Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R
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AUD 0.8083
Multiples of: 3000

           Tape And Reel    enhancement  
IRLR2905


IRLR2905
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AUD 0.8083
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           -       
TPN11003NL,LQ(S


MOSFETS SILICON N-CHANNEL MOS
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AUD 0.8083
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IRFR214PBF-BE3


N-Channel 250V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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AUD 0.8085
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2.2 A250 V2 OhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 20 V , + 20 V8.2 nCEnhancement  
SQJB90EP-T1_GE3


MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified
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AUD 0.8088
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30 A80 V17.9 mOhmsN - Channel 2.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V25 nCEnhancementAec - Q101Trenchfet
IPD65R950CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
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AUD 0.8088
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            Coolmos      
TPCA8052-H(T2L1,VM


MOSFET SOP-8-ADV PD=45W 1MHz PWR MOSFET TRNS
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AUD 0.8088
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20 A40 V13.1 mOhmsN - Channel 2.3 V- 55 C+ 150 C30 WSmd/SmtSOP - 8Cut TapeSi1 Channel20 V25 nCEnhancement U - Mosvi - H
SI7386DP-T1-E3-HXY


30V 70A 5.7mΩ 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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AUD 0.8088
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FDS6910_T


Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
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ON Semiconductor 0
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AUD 0.8091
Multiples of: 2500

                   
DMN7022LFGQ-13


MOSFET MOSFET BVDSS: 61V-100V
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AUD 0.8097
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23 A75 V14.6 mOhmsN - Channel 1 V- 55 C+ 150 C2 W Powerdi3333 - 8Cut TapeSi1 Channel10 V56.5 nCEnhancementAec - Q101 
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