MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS92DN-T1-GE3


MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.8045
Multiples of: 3000

12.3 A250 V173 mOhmsN - Channel 2 V- 55 C+ 150 C65.8 WSmd/SmtPOWERPAK - 1212 - 8SH - 8Cut TapeSi1 Channel20 V16 nCEnhancement Trenchfet; Powerpak
UT6K30TCR


MOSFET 60V NCH+NCH POWER
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ROHM 0
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AUD 0.8045
Multiples of: 1

3 A60 V153 mOhmsN - Channel 1.3 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8DCut TapeSi2 Channel20 V2.1 nCEnhancement  
PMV250EPEA215


- MOSFETs ROHS
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Nexperia 0
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AUD 0.8046
Multiples of: 1

                   
KNB2908B


80V 130A 5m@10V,35A 2.9V@250uA 1PCSNChannel TO-263-3 MOSFETs ROHS
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KIA 0
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AUD 0.8046
Multiples of: 1

                   
SI2337DS-T1-BE3


MOSFET P-CHANNEL 80-V (D-S)
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AUD 0.805
Multiples of: 1

2.2 A80 V270 mOhmsP - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V7 nCEnhancement  
IRF610SPBF


MOSFET N-Chan 200V 3.3 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.805
Multiples of: 1000

3.3 A200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C36 WSmd/SmtD2PAKTubeSi1 Channel10 V8.2 nCEnhancement  
NCV8440ASTT1G


MOSFET 2.6A, 52V N-CH, CLAM
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ON Semiconductor 0
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AUD 0.805
Multiples of: 1000

  110 mOhmsn - channel  - 55 C+ 150 C1.69 Wsmd/smtSOT - 223Reelsi    aec - q100 
TSM3N100CP ROG


MOSFET 1000V 2.5A Single N- Channel Power MOSFET
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Taiwan Semiconductor 0
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AUD 0.8053
Multiples of: 1

2.5 A1 kV6 OhmsN - Channel 3.5 V- 55 C+ 150 C99 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V19 nCEnhancement  
BSZ100N06LS3GXT


Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
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Infineon 0
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AUD 0.8053
Multiples of: 5000

                   
IPSA70R360P7SAKMA1


Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
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Infineon 0
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AUD 0.8055
Multiples of: 1

            Coolmos P7      
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