MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSD30140DN56


MOSFET N Trench 30V 85A (Tc) 2.5V @ 250uA 2.4 mΩ @ 20A,10V DFN5x6-8 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Winsok 0
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AUD 0.797
Multiples of: 1

                   
2SK2965-VB


200V 15A 37W 0.2@10V,4.3A 4V@250uA TO-220F MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.7974
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IPP023N04NG-VB


40V 110A 6m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7974
Multiples of: 1

                   
TK6R7P06PL,RQ


MOSFET N-Ch 60V 1990pF 26nC 74A 66W
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Toshiba 0
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AUD 0.7975
Multiples of: 2500

74 A60 V5 mOhmsN - Channel 1.5 V + 175 C66 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V26 nCEnhancement  
WML09N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 6A; 26W; TO220F
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Wayon 0
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AUD 0.7978
Multiples of: 1

            Sj - Mosfet C2      
IPB034N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO263-3
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Infineon 0
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AUD 0.7978
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            optimos 3      
NVMFS5C430NWFT1G


MOSFET T6-D3F 40V NFET
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ON Semiconductor 0
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AUD 0.7979
Multiples of: 1

185 A40 V1.4 mOhmsn - channel 2.5 V- 55 C+ 175 C106 Wsmd/smtDFN - 5Cut Tapesi1 channel20 V47 nCenhancementaec - q101 
FDMS86569_F085


MOSFET 60V 65A N-Channel Power Trench MOSFET
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ON Semiconductor 0
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AUD 0.7984
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65 A60 V8.3 mOhmsn - channel 2 V- 55 C+ 175 C100 Wsmd/smtPOWER56 - 8Reelsi1 channel+/- 20 V54 nCenhancement powertrench
TSM026NA03CR RLG


MOSFET Power MOSFET, N-CHL 30V, 168A, 2.6mOhm
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Taiwan Semiconductor 0
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AUD 0.7984
Multiples of: 1

168 A30 V1.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C125 w , 2.6 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V41 nCEnhancement  
ZXMN6A08E6


MOSFET, N, SOT-23-6
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Diodes Incorporated 0
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AUD 0.7985
Multiples of: 1

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