MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KCB3008B


TO-263-2 MOSFETs ROHS
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KIA 0
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AUD 0.777

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NCE60P50K-VB


60V 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7772

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HY3210B


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 8.5 mΩ @ 60A,10V TO-263-2L RoHS
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HuaYi 0
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AUD 0.7772

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FDD6612A


MOSFET 30V N-Ch PowerTrench
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ON Semiconductor 0
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AUD 0.7773

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30 A30 V15 mOhmsn - channel  - 55 C+ 175 C2.8 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
TK22A10N1,S4X


MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V
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Toshiba 0
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AUD 0.7774

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22 A100 V11.5 mOhmsn - channel 2 v to 4 V- 55 C+ 150 C30 Wthrough holeTO - 220 - 3 si1 channel20 V28 nCenhancement  
NCEP10N12


TO-220 MOSFETs ROHS
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NCE Power 0
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AUD 0.7774

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ZVN4210ASTOA


Trans MOSFET N-CH 100V 0.45A 3-Pin TO-92 T/R
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Diodes Incorporated 0
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AUD 0.7778

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450 mA100 V1.8 OhmsN - channel20 V - 55 C+ 150 C700 mWThrough_HoleTO - 92 - 3Bulk    Enhancement  
SIJA58ADP-T1-GE3


MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L
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Vishay 0
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AUD 0.7778

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32.3 A40 V2.65 mOhmsN - Channel 1.1 V- 55 C+ 150 C56.8 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel20 v , - 16 V61 nCEnhancement  
SIR618DP-T1-GE3


MOSFET 200V Vds 20V Vgs PowerPAK SO-8
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Vishay 0
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AUD 0.7778

Multiples of: 1

14.2 A200 V76 mOhmsN - Channel 2 V- 55 C+ 150 C48 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V21.5 nCEnhancement Trenchfet, Powerpak
SQJ942EP-T1_GE3


MOSFET 40V 15A AEC-Q101 Qualified
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Vishay 0
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AUD 0.7779

Multiples of: 1

15 A , 45 A40 V11 mOhms , 22 mOhmsN - Channel 1.8 V- 55 C+ 175 C17 w , 48 WSmd/SmtSO - 8L - 4ReelSi2 Channel20 V13.1 nC , 22.5 nCEnhancementAec - Q101Trenchfet
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