MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ407EP-T1_GE3


MOSFET -30V Vds PowerPAK AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.7709

Multiples of: 3000

60 A30 V4.4 mOhmsP - Channel 2 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V169 nC Aec - Q101Trenchfet
SIR864DP-T1-GE3


MOSFET RECOMMENDED ALT 78-SIRA10DP-T1-GE3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.771

Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK SO - 8Reelsi     trenchfet, powerpak
BSZ058N03MSGXT


MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
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Infineon 0
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AUD 0.771

Multiples of: 1

40 A30 V4.2 mOhmsN - Channel 1 V- 55 C+ 150 C45 WSmd/SmtTSDSON - 8Cut TapeSi1 Channel20 V40 nCEnhancement  
TPH2R104PL,LQ


MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=116W F=1MHZ
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AUD 0.771

Multiples of: 1

180 A40 V2.1 mOhmsN - Channel 1.4 V + 175 C116 WSmd/SmtSOP - 8Cut TapeSi1 Channel20 V78 nCEnhancement U - Mosix - H
DMG7N65SJ3


MOSFET MOSFET BVDSS: 501V-650V
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Diodes Incorporated 0
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AUD 0.7712

Multiples of: 1

5.5 A650 V1.1 OhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 251 - 3TubeSi1 Channel30 V25 nCEnhancement  
NCE0117K-VB


100V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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AUD 0.7714

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LN60A01ES-LF


MOSFET 600V, 3 N-Channel FET
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AUD 0.7721

Multiples of: 1

80 mA600 V190 Ohmsn - channel  - 20 C+ 85 C1.3 Wsmd/smtSOIC - 8Tubesi3 channel15 V    
IRFR18N15DHR


Trans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK
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Infineon 0
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AUD 0.7726

Multiples of: 62

                enhancement  
PSMN1R7-30YL.115


Transistor: N-MOSFET; unipolar; 30V; 100A; 109W; PowerSO8
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AUD 0.7726

Multiples of: 1

                   
RJK1525DPJ-VB


150V 20A 1PCSNChannel TO-220AB MOSFETs ROHS
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AUD 0.7726

Multiples of: 1

                   
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