MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR3410TRPBF-VB


100V 40A null TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.7215
Multiples of: 1

                   
TK110A10PL,S4X


MOSFET TO-220SIS PD=36W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 0.7216
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36 A100 V16 mOhmsN - Channel 2.5 V- 55 C+ 175 C36 WThrough HoleTO - 220SIS - 3TubeSi1 Channel20 V33 nCEnhancement U - Mosix - H
SQJB00EP-T1_GE3


MOSFET N-Ch 60V Vds AEC-Q101 Qualified
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Vishay 0
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AUD 0.7216
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30 A60 V10.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V35 nC , 35 nCEnhancementAec - Q101Trenchfet
NVD5806NT4G


ON Semiconductor MOSFET POWER MOSFET 40V
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ON Semiconductor 0
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AUD 0.7217
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33 A40 V12.7 mOhmsn - channel   + 175 C40 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V  aec - q101 
BUK9509-40B,127


MOSFET HIGH PERF TRENCHMOS
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Nexperia 0
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AUD 0.7218
Multiples of: 1

95 A40 V7 mOhmsN - Channel  - 55 C+ 175 C157 WThrough HoleTO - 220 - 3TubeSi1 Channel15 V Enhancement  
DTU40P06


60V 25A 53mO@10V,25A P Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7219
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IRFR15N20DPBF


International Rectifier MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms
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Infineon 0
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AUD 0.7221
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17 A200 V165 mOhmsN - Channel30 V5.5 V- 55 C+ 175 C140 WSmd/SmtDPAK - 3TubeSi1 Channel30 V27 nCEnhancement  
STD4NK50Z1


Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) IPAK Tube
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STMicroelectronics 0
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AUD 0.7222
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3 A  N    45 WThrough Hole Rail/Tube    Enhancement  
HF10N60


MOSFET N Trench 600V 9.5A (Tc) 4.5V @ 250uA 800 mΩ @ 4.75A,10V TO-220F (TO-220IS) RoHS
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Haolin 0
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AUD 0.7224
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GC11N70F


MOSFET N Trench 700V 11A (Tc) 4.5V @ 250uA 395 mΩ @ 5.5A,10V TO-220F RoHS
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GOFORD 0
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AUD 0.7224
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