MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3482-VB


100V 35A 1PCSNChannel TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7065
Multiples of: 1

                   
ISL9N306AS3ST-VB


30V 98A 3.8m@10V 1PCSNChannel D2PAK MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7065
Multiples of: 1

                   
IPG20N06S4L-26A


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 0
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AUD 0.707
Multiples of: 1

20 A , 20 A60 v , 60 V21 mOhms , 21 mOhmsN - Channel 1.2 v , 1.2 V- 55 C+ 175 C33 WSmd/SmtTDSON - 8ReelSi2 Channel+/- 16 v , +/- 16 V20 nC , 20 nCEnhancementAec - Q101Optimos
G18N20K


MOSFET N Channel 200V 18A(Tc) 3V @ 250uA 160mΩ @ 9A,10V TO-252 RoHS
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AUD 0.7071
Multiples of: 1

                   
AOD482


100V 40A 30mO@10V,40A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7072
Multiples of: 1

                   
BSP372L6327


MOSFET N-Ch 100V 1.7A SOT-223-3
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AUD 0.7074
Multiples of: 1

   N Channel               
IRF7910TRPBF


Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8
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Infineon 0
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AUD 0.7075
Multiples of: 4000

10 A12 V15 mOhmsN - Channel 2 V + 150 C2 WSmd/SmtSO - 8ReelSi2 Channel 26 nC   
IRF7488TRPBF


MOSFET MOSFT 80V 6.3A 29mOhm 38nC
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Infineon 0
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AUD 0.7075
Multiples of: 4000

6.3 A80 V29 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V38 nC   
SISC06DN-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.7076
Multiples of: 1

40 A30 V4 mOhmsN - Channel 1 V- 55 C+ 150 C46.3 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel4.5 V38.5 nCEnhancement Trenchfet, Powerpak
NVMYS025N06CLTWG


MOSFET N-Channel 60V 21A 4-Pin LFPAK T/R
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ON Semiconductor 0
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AUD 0.7076
Multiples of: 1

21 A60 V27.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtLFPAK - 4Cut TapeSi1 Channel20 V5.8 nCEnhancementAec - Q101 
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