MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIF18N50


TO-220FP MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SI 0
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AUD 0.6887
Multiples of: 1

                   
IPB45N04S4L-08


Infineon Technologies MOSFET N-Ch 40V 45A D2PAK-2 OptiMOS-T2
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Infineon 0
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AUD 0.6887
Multiples of: 1

45 A40 V7.6 mOhmsn - channel20 V - 55 C+ 175 C45 Wsmd/smtD2PAK - 3Reelsi1 channel20 V23 nC  optimos
SI4102DY-T1-GE3


MOSFET 100V 3.8A 4.8W 158mohm @ 10V
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Vishay 0
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AUD 0.6887
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtSOIC - 8 NarrowReelsi     trenchfet
SQJ446EP-T1_GE3


MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.6887
Multiples of: 3000

60 A40 V3.7 mOhmsN - Channel 1.5 V- 55 C+ 175 C46 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V65 nCEnhancementAec - Q101Trenchfet
TPN4R806PL,L1Q


MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=104W F=1MHZ
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Toshiba 0
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AUD 0.6888
Multiples of: 1

105 A60 V4.8 mOhmsN - Channel 1.5 V + 175 C104 WSmd/SmtTSON - 8Cut TapeSi1 Channel20 V29 nCEnhancement U - Mosix - H
IPSA70R1K4CEAKMA1


MOSFET CONSUMER
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Infineon 0
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AUD 0.6888
Multiples of: 1

           Tube      Coolmos
SI9945AEY-T1-E3


60V 7A 4W 28mO@10V,4.5A 2 N-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.6889
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NCE40P13S


MOSFET P Trench 40V 13A 2.5V @ 250uA 15 mΩ @ 12A,10V SOP-8 RoHS
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NCE Power 0
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AUD 0.6889
Multiples of: 5

                   
FDD9411L_F085


MOSFET PT8N 40V N-ChannelLL PowerTrench MOSFET
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ON Semiconductor 0
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AUD 0.689
Multiples of: 2500

25 A40 V5.6 mOhmsN - Channel 1 V- 55 C+ 175 C48.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V27 nCEnhancement  
IRFR5410PBF


Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
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Infineon 0
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AUD 0.6891
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtDPAKTube       
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First...43064307430843094310...

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