MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOI403


Transistor: P-MOSFET; unipolar; -30V; -55A; 45W; TO251A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega 0
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AUD 0.6789

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FC6B22160L1


MOSFET WL-CSP Dual Nchannel MOSFET
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Panasonic 0
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AUD 0.6789

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8 A , 17 A20 V11.8 mOhmsN - Channel 350 mV- 55 C+ 150 C450 mW , 2.1 WSmd/SmtCSP - 6Cut TapeSi2 Channel8 V35 nCEnhancement  
2SJ668


Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK
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AUD 0.679

Multiples of: 2000

                   
FDS8878-F123


MOSFET 30V N-CHAN 10.2A
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ON Semiconductor 0
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AUD 0.6791

Multiples of: 2500

           Cut Tape       
SISS10ADN-T1-GE3


MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8S
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Vishay 0
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AUD 0.6794

Multiples of: 1

31.7 A40 V2.65 mOhmsN - Channel 1.1 V- 55 C+ 150 C56.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 v , - 16 V61 nCEnhancement  
NCE55P15K


60V 25A 53mO@10V,25A P Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.6795

Multiples of: 1

                   
FDMS0306AS


Fairchild Semiconductor MOSFET
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ON Semiconductor 0
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AUD 0.6795

Multiples of: 3000

26 A30 V2 mOhmsN - Channel 1.7 V- 55 C+ 150 C2.5 WSmd/SmtPOWER56 - 8ReelSi +/- 20 V41 nCEnhancement Powertrench Syncfet
IPZ40N04S5L-7R4


Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
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Infineon 0
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AUD 0.6796

Multiples of: 1

            Optimos 5      
FCPF190N65S3L1


MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
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ON Semiconductor 0
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AUD 0.6796

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14 A650 V165 mOhmsN - Channel 2.5 V- 55 C+ 150 C33 WThrough HoleTO - 220F - 3 Si1 Channel30 V30 nCEnhancement  
JCS10N70FH-220MF


MOSFET N Trench 700V 10A (Tc) 5V @ 250uA 1.1 Ω @ 5A,10V TO-220MF RoHS
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Jilin 0
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AUD 0.6798

Multiples of: 1

                   
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