MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STU6N65K3


N-Channel 650 V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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STMicroelectronics 0
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AUD 0.6731
Multiples of: 1

5.4 A650 V1.1 Ohmsn - channel 3.75 V- 55 C+ 150 C110 Wthrough holeIPAK - 3Tube 1 channel30 V33 nCenhancement supermesh
BUK9275-100A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 0
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AUD 0.6732
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21.7 A100 V72 mOhmsn - channel10 V - 55 C+ 175 C88 Wsmd/smtDPAK - 3Reelsi1 channel10 V enhancement  
IRF6216PBF


Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
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Infineon 0
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AUD 0.6736
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8Tube       
IPD70R950CEAUMA1


MOSFET CONSUMER
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Infineon 0
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AUD 0.6736
Multiples of: 2500

 700 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
SISS50DN-T1-GE3


MOSFET 45-V D-S MOSFET N-CHANNEL PowerPAK
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Vishay 0
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AUD 0.6737
Multiples of: 1

108 A45 V2.83 mOhmsN - Channel 2.3 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - 1212 - 8SCut TapeSi1 Channel- 16 v , 20 V46.7 nCEnhancement Trenchfet
TPC8223-H,LQ(S


Toshiba MOSFET N-Ch Dual 30V 9A 1.5W 1190pF
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Toshiba 0
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AUD 0.6737
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9 A30 V21 mOhmsn - channel    1.5 Wsmd/smtSOP - 8Reelsi2 channel     
SPD50P03L G


MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P
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Infineon 0
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AUD 0.6741
Multiples of: 1

50 A30 V5.7 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252ReelSi1 Channel20 V- 126 nCEnhancementAec - Q101Optimos
SI6435ADQ-T1-GE3


MOSFET 30V 5.5A 1.5W 30mohm 10V
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Vishay 0
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AUD 0.6742
Multiples of: 1

4.7 A- 30 V30 mOhmsp - channel20 V - 55 C+ 150 C1.5 Wsmd/smtTSSOP - 8Reel    enhancement  
HFS10N65U


MOSFET N Trench 650V 9.5A (Tc) 4.5V @ 250uA 980 mΩ @ 4.75A,10V TO-220F RoHS
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SemiHow 0
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AUD 0.6742
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HYG072N10LS1C2


100V 80A 6mΩ@10V,20A 75W N Channel TDSON-8(5.2x5.9) MOSFETs ROHS
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AUD 0.6742
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