MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7907PBF


MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.6483

Multiples of: 1

9.1 A30 V20.5 mOhmsn - channel  - 55 C+ 150 C2.0 Wsmd/smtSOIC - 8Tubesi2 channel20 V6.7 nCenhancement  
SISH101DN-T1-GE3


MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
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Vishay 0
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AUD 0.6485

Multiples of: 3000

35 A30 V7.2 mOhmsP - Channel 2.5 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8SH - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V102 nCEnhancement TrenchFET; PowerPAK
SQJB70EP-T1_GE3


MOSFET Dual N-Ch 100V AEC-Q101 Qualified
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AUD 0.6485

Multiples of: 1

11.3 A100 V78 mOhmsN - Channel 3 V- 55 C+ 175 C27 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V7 nCEnhancementAec - Q101Trenchfet
IRF7811AVPBF


Transistor: N-MOSFET; unipolar; 30V; 14A; 3.5W; SO8
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AUD 0.6486

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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8Tube       
AP9575GJ


MOSFET TO-251 RoHS
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AUD 0.6486

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NVD5414NT


MOSFET TO-252 RoHS
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AUD 0.6486

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HYG035N08NS2C2


DFN-8(5.1x6.1) MOSFETs ROHS
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AUD 0.6486

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JMSH1004AE


100V 190A 250W 3mΩ@10V,20A 2.7V@250uA N Channel TO-263-3 MOSFETs ROHS
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AUD 0.6488

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MCAC6D5N10YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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AUD 0.649

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74 A100 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C104 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
HSP0018A


MOSFET N Channel 100V 58A 4.5V @ 250uA 22mΩ @ 30A,10V TO-220 RoHS
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AUD 0.6491

Multiples of: 1

                   
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