MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1450DH-T1-E3


MOSFET 8.0V 4.0A 2.78W 47mohm 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.6314
Multiples of: 1

4.53 A8 V47 mOhmsn - channel5 V - 55 C+ 150 C1.56 Wsmd/smtSOT - 363 - 6Reel    enhancement  
SIA411DJ-T1-E3


MOSFET 20V 12A 19W 30mohm 4.5V
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Vishay 0
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AUD 0.6314
Multiples of: 1

8.8 A- 20 V30 mOhmsp - channel8 V - 55 C+ 150 C3.5 Wsmd/smtPOWERPAK - SC - 70 - 6Reel    enhancement  
DMT3011LDT-7


MOSFET MOSFET BVDSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.6314
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         Smd/SmtV - DFN3030 - K - 8Cut TapeSi      
WMO10N65C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 650V; 8A; 57W; TO252
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Wayon 0
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AUD 0.6314
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            Sj - Mosfet C2      
TK25S06N1L,LQ


MOSFET PWR MOSFET TRANS DPAK+
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Toshiba 0
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AUD 0.6316
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25 A60 V18.5 mOhmsN - Channel 1.5 V- 55 C+ 175 C57 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V15 nCEnhancementAEC - Q101U - MOSVIII - H
FQT5P10


100V 3A 200mO@10V,3A P Channel SOT-223 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.6316
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RQ3G120BJFRATCB


MOSFETs Pch -40V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 0
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AUD 0.6317
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12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
IRFR9N20DTRPBF


International Rectifier MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
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Infineon 0
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AUD 0.6318
Multiples of: 2000

9.4 A200 V380 mOhmsN - Channel  - 55 C+ 175 C86 WSmd/SmtDPAK - 3ReelSi1 Channel30 V18 nCEnhancement  
FDZ371PZ


MOSFET P-Ch 1.5V Specified PowerTrench
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ON Semiconductor 0
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AUD 0.6319
Multiples of: 1

3.7 A20 V100 mOhmsp - channel  - 55 C+ 150 C1.7 Wsmd/smtWL - CSPReelsi1 channel8 V enhancement powertrench
NVD6416ANT4G


MOSFET N-Channel Power MOSFET 100V, 17A, 81mO Power MOSFET 100V 17A 81 mOhm Single N-Channel DPAK
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ON Semiconductor 0
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AUD 0.632
Multiples of: 1

80 A100 V74 mOhmsN - Channel  - 55 C+ 175 C71 WSmd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
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