MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV32UP,215


MOSFET P-CH -20 V -4 A
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NXP 0
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AUD 0.5978
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STB35NF10T4


Transistor: N-MOSFET; unipolar; 100V; 28A; 115W; D2PAK
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STMicroelectronics 0
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AUD 0.598
Multiples of: 1000

            supermesh      
SSM3K03FE(TPL3,F)


MOSFET
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Toshiba 0
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AUD 0.598
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PTD80N06


TO-252 MOSFETs ROHS
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PUOLOP 0
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AUD 0.5981
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IRFZ48NP


MOSFET TO-220AB RoHS
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VBsemi Elec 0
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AUD 0.5982
Multiples of: 1

                   
SUD23N06-31L


MOSFET TO-252 RoHS
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VBsemi Elec 0
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AUD 0.5982
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FCPF380N60E_F152


Fairchild Semiconductor MOSFET 650V, 380mOhm SuperFET II MOSFET
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ON Semiconductor 0
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AUD 0.5982
Multiples of: 19

10.2 A600 V380 mOhmsn - channel 3.5 V- 55 C+ 150 C31 Wthrough holeTO - 220 - 3  1 channel20 v , 30 V34 nCenhancement  
SPD07N20 G


MOSFET N-KANAL POWER MOS
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Infineon 0
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AUD 0.5982
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7 A200 V300 mOhmsn - channel 2.1 V- 55 C+ 175 C40 Wsmd/smtTO - 252Reelsi1 channel20 V31.5 nCenhancement optimos
AGM12T08C


120V 78A 96W 6.7m@10V,20A 1.6V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.5984
Multiples of: 1

                   
SIZ340DT-T1-GE3


Mosfet Array 2 N-Channel (Half Bridge) 30V 30A, 40A 16.7W, 31W Surface Mount 8-Power33 (3x3)
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Vishay 0
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AUD 0.5984
Multiples of: 3000

30 A30 V9.5 mOhmsN - Channel20 V2.4 V- 55 C+ 150 C16.7 WSmd/SmtPowerpair - 8ReelSi  12.3 nCEnhancement Trenchfet
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