MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3005LK3-13


MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.5766
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14.5 A30 V2.5 mOhmsn - channel  - 55 C+ 150 C1.68 Wsmd/smtTO 252 - 3LReelsi1 channel20 V46.9 nC   
YJQ40G10AQ


100V 40A 43W 18.5m@10V 2.5V@250uA 1 N-Channel DFN3333-8L MOSFETs ROHS
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Yangjie 0
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AUD 0.5766
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APM4532KC


MOSFET SO-8 RoHS
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VBsemi Elec 0
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AUD 0.5767
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IRF7307PBF


Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.2/-4.3A; 1.4W; SO8
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Infineon 0
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AUD 0.5768
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4.3 A20 V50 mOhmsN And P - Channel  - 55 C+ 150 C1.4 WSmd/SmtSOIC - 8TubeSi2 Channel12 V13.3 nCEnhancement  
SQS150ELNW-T1_GE3


MOSFETs
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Vishay 0
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AUD 0.5768
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145 A40 V2.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C117 WSMD/SMTPOWERPAK - 1212 - 8SLW Si1 Channel- 10 V , + 10 V40 nC  TrenchFET
SQS201CENW-T1_GE3


MOSFETs P-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 0
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AUD 0.5768
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16 A100 V80 mOhmsP - Channel 2.5 V- 55 C+ 175 C62.5 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.4 nCEnhancement  
KCB3008A


85V 160A 4.5mΩ@10V,50A 220W 3V@250uA N Channel TO-263-2 MOSFETs ROHS
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KIA 0
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AUD 0.5769
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IRFH5302PBF-HXY


30V 150A 2m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 0
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AUD 0.5769
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HSBA6048


MOSFET N Channel 60V 85A 2.3V @ 250uA 3.6mO @ 20A,10V PRPAK5x6 RoHS
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HUASHUO 0
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AUD 0.5771
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PSMN3R5-25MLD


MOSFET, N-CH, 25V, 70A, SOT-1210-8
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NXP 0
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AUD 0.5771
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