MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CXDM4060P TR


MOSFET 40Vds P-Ch Enh FET 25Vgs 6.0A 1.2W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Central Semiconductor 0
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AUD 0.5681
Multiples of: 1

- 6 A- 40 V65 mOhmsP - Channel     Smd/SmtSOT - 89 - 3ReelSi1 Channel     
VN10LP


Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line
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Ferranti 0
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AUD 0.5681
Multiples of: 1

270 mA60 V7.5 Ohmsn - channel20 V - 55 C+ 150 C625 mWthrough holeTO - 92 - 3Reel    enhancement  
SI4946CDY-T1-GE3


MOSFET 60V Vds 20V Vgs SO-8
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Vishay 0
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AUD 0.5681
Multiples of: 2500

6.1 A60 V51.6 mOhmsN - Channel 3 V- 55 C+ 150 C2.8 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V2.4 nCEnhancement  
IRFI9530G


100V 18A 200mO@10V,18A P Channel TO-220F-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5681
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IPD90N06S4-07


MOSFET N-Channel 60V MOSFET
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Infineon 0
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AUD 0.5682
Multiples of: 1

90 A60 V5.7 mOhmsn - channel 2 V- 55 C+ 175 C79 Wsmd/smtPG - TO - 252 - 3Reelsi1 channel20 V56 nCenhancement optimos
VBZE12N10


100V 17A 90mO@10V,17A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5683
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IRFR9N20DPBF


Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
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Infineon 0
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AUD 0.5684
Multiples of: 1

9.4 A200 V380 mOhmsN - Channel  - 55 C+ 175 C86 WSmd/SmtDPAKTubeSi1 Channel30 V18 nCEnhancement  
FDFME2P823ZT


MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
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ON Semiconductor 0
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AUD 0.5686
Multiples of: 1233

                   
SISH103DN-T1-GE3


MOSFETs P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH, 8.9 mohm a. 10V, 15 mohm a. 4.5V
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Vishay 0
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AUD 0.5686
Multiples of: 1

54 A30 V8.9 mOhmsP - Channel 2.5 V- 55 C+ 150 C41.6 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V48 nCEnhancement  
SISHA12ADN-T1-GE3


MOSFET N-Channel 30 V D-S MOSFET
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Vishay 0
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AUD 0.5686
Multiples of: 1

25 A30 V4.3 mOhmsN - Channel 1.1 V- 55 C+ 150 C28 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 16 v , 20 V29.5 nCEnhancement Powerpak
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