MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD16NF06


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5565
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FHD80N08B


80V 80A 9.5mO@10V,40A 45W N Channel TO-252 MOSFETs ROHS
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FeiHong 0
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AUD 0.5565
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50N06L-TF3-T


MOSFET N Trench 60V 50A (Tc) 4V @ 250uA 23 mΩ @ 25A,10V TO-220F (TO-220IS) RoHS
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Unisonic 0
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AUD 0.5565
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HY3503C2


MOSFET N Trench 30V 150A (Tc) 3V @ 250uA 2.5 mΩ @ 20A,10V PPAK5*6-8L RoHS
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HuaYi 0
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AUD 0.5568
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GT080N10K


100V 75A 6.5mΩ 100W 1.3V null TO-263 MOSFETs ROHS
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GOFORD 0
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AUD 0.5568
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PSMN030-60YS


MOSFET,N CH,60V,29A,LFPAK
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Nexperia 0
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AUD 0.5569
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   N Channel               
RFD3055LE


Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; IPAK
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ON Semiconductor 0
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AUD 0.5571
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   N Channel               
IRF7663TRPBF


MOSFET MOSFT PCh -20V -8.2A 20mOhm 30nC Micro 8
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Infineon 0
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AUD 0.5572
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- 8.2 A- 20 V20 mOhmsp - channel12 V   1.8 W MICRO - 8Reel   30 nC   
SPD04P10P G


MOSFET P-CH 100V 4A
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Infineon 0
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AUD 0.5573
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4 A100 V644 mOhmsP - Channel 4 V- 55 C+ 175 C38 WSmd/SmtTO - 252ReelSi1 Channel20 V12 nCEnhancement Sipmos
IRF7304PBF


Transistor: P-MOSFET x2; unipolar; -20V; -4.3A; 2W; SO8
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Infineon 0
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AUD 0.5573
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8Tube       
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