MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD4804NT4G


TO-252 MOSFETs ROHS
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VBsemi Elec 77
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AUD 0.5286
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FQU13N06LTU


MOSFET 60V N-Channel QFET Logic Level
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ON Semiconductor 0
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AUD 0.5284
Multiples of: 1

11 A60 V115 mOhmsN - Channel  - 55 C+ 150 C2.5 WThrough HoleIPAKTubeSi1 Channel20 V Enhancement  
FDS6990AS


MOSFET 30V DUAL N-CH. FET 18 MO SO8
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ON Semiconductor 0
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AUD 0.5284
Multiples of: 2500

7.5 A30 V17 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtSO - 8Reelsi2 channel20 V enhancement powertrench syncfet
TPC8107


30V 13.5A 11mO@10V,13.5A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5284
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MTP10N10ELG-VB


100V 127m@10V 4V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5284
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AOD488


Trans MOSFET N-CH 40V 20A 3-Pin(2+Tab) DPAK T/R
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Alpha & Omega 0
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AUD 0.5284
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TSM35N10CP ROG


MOSFET 100V 32A Single N-Ch annel Power MOSFET
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Taiwan Semiconductor 0
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AUD 0.5285
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32 A100 V30 mOhmsN - Channel 1 V- 55 C+ 150 C83.3 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V34 nCEnhancement  
DMNH4026SSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 0
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AUD 0.5285
Multiples of: 2500

         Smd/SmtSO - 8Cut TapeSi    Aec - Q101 
IPB65R280C6ATMA1


Transistor: N-MOSFET; unipolar; 650V; 39A; 104W; PG-TO263-3
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Infineon 0
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AUD 0.5287
Multiples of: 1000

            coolmos      
SI4947DY


MOSFET SO-8 RoHS
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VBsemi Elec 0
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AUD 0.5287
Multiples of: 1

                   
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