MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HYG023N04LS1D


40V 120A 2mΩ@10V,40A 75W 1.9V@250uA 45pF@25V N Channel 4032pF@25V 27.4nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
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AUD 0.507
Multiples of: 1

                   
HYG019N04NR1C2


PDFN5x6-8L MOSFETs ROHS
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AUD 0.507
Multiples of: 1

                   
ZVNL110ASTZ


MOSFET N-Chnl 100V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.5071
Multiples of: 2000

320 mA100 V3 OhmsN - Channel 750 mV- 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
SI4214DDY-T1-E3


MOSFET 30V Vds 20V Vgs SO-8
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Vishay 0
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AUD 0.5073
Multiples of: 2500

           Cut TapeSi      
DMP1011LFV-13


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 0
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AUD 0.5075
Multiples of: 3000

19 A12 V9.8 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.16 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel6 V9.5 nCEnhancement  
NTTFS4932NTAG


N-Channel 30 V 11A (Ta), 79A (Tc) 850mW (Ta), 43W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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ON Semiconductor 0
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AUD 0.5077
Multiples of: 3000

79 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C2.2 WSmd/SmtWDFN8ReelSi1 Channel20 V    
NVTFS4C06NWFTAG


MOSFET NFET U8FL 30V 71A 4.2MOHM
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ON Semiconductor 0
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AUD 0.5077
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71 A30 V4.2 mOhmsn - channel20 V2.2 V- 55 C+ 175 C3.1 Wsmd/smtWDFN - 8Reelsi1 channel20 V26 nC aec - q101 
25N06L-TN3-T-VB


60V 45A 25mΩ@10V 1PCSNChannel TO-252 MOSFETs ROHS
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AUD 0.5077
Multiples of: 1

                   
IRFU9024PBF-VB


60V 1PCSPChannel TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5077
Multiples of: 1

                   
NP32N055SDE-VB


60V 45A 25m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.5077
Multiples of: 1

                   
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