MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4833ADY-T1-GE3


Trans MOSFET P-CH 30V 3.85A 8-Pin SOIC N T/R
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Vishay 0
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AUD 0.4976

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3.85 A- 30 V72 mOhmsp - channel  - 55 C+ 150 C1.93 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement trenchfet
SQ2310ES-T1_GE3


N-Channel 20 V 6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 0
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AUD 0.4976

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6 A20 V24 mOhmsN - Channel 400 mV- 55 C+ 175 C2 WSmd/SmtTO - 236 - 3Cut TapeSi1 Channel8 V8.5 nCEnhancementAec - Q101Trenchfet
VBE1638A


TO-252-2 MOSFETs ROHS
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AUD 0.4976

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FQPF4N60


TO-220 FULLPAK MOSFETs ROHS
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AUD 0.4976

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NCEP020N30GU


30V 100A 1.75mΩ@10V,50A 70W N Channel DFN-8(5.8x4.9) MOSFETs ROHS
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NCE Power 0
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AUD 0.4977

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PMPB07R3VPX


MOSFETs PMPB07R3VP/SOT1220-2/DFN2020M-
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AUD 0.4978

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BSH201.215


Transistor: P-MOSFET; unipolar; -60V; -0.19A; 170mW; SOT23
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AUD 0.4978

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NTD5C668NL-HXY


60V 80A 6m 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.4979

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SI4922BDY


30V 8.5A 16mO@10V,8A 3.1W N Channel SO-8 MOSFETs ROHS
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AUD 0.4979

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Si4435DYPbF


MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC
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Infineon 0
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AUD 0.498

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8 A30 V20 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8TubeSi1 Channel20 V40 nCEnhancement  
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