MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT10H025SSS-13


MOSFET MOSFET BVDSS: 61V-100V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.4728

Multiples of: 2500

7.4 A100 V23 mOhmsN - Channel 2 V- 55 C+ 150 C12.9 WSmd/SmtSO - 8 Si1 Channel10 V21.4 nCEnhancement  
SP60P11TH


TO-252-2L MOSFETs ROHS
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Siliup 0
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AUD 0.4729

Multiples of: 1

                   
JCS5N50CT-220C


MOSFET N Trench 500V 5A (Tc) 4.5V @ 250uA 1.6 Ω @ 2.5A,10V TO-220C RoHS
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Jilin 0
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AUD 0.4731

Multiples of: 1

                   
TSM9926DCS RLG


MOSFET 20V Dual N channel MOSFET
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Taiwan Semiconductor 0
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AUD 0.4732

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6 A20 V21 mOhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOP - 8Cut TapeSi1 Channel4.5 V4.86 nCEnhancement  
BUK7275-100A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 0
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AUD 0.4734

Multiples of: 2500

21.7 A100 V75 mOhmsN - Channel  - 55 C+ 175 C89 WSmd/SmtSOT - 428ReelSi1 Channel20 V Enhancement  
FDS6680AS


Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2.5W; SO8
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ON Semiconductor 0
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AUD 0.4734

Multiples of: 1

            powertrench®      
IRFHM792TRPBF


MOSFET 100V DUAL N-CH HEXFET
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Infineon 0
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AUD 0.4735

Multiples of: 4000

2.3 A100 V195 mOhmsN - Channel 3 V- 55 C+ 150 C2.3 WSmd/SmtPQFN - 8Cut TapeSi2 Channel20 V4.2 nC   
SI3434DV-T1-E3


MOSFET 30V 6.1A
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Vishay 0
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AUD 0.4735

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6.1 A30 V34 mOhmsN - Channel12 V - 55 C+ 150 C2 WSmd/SmtTSOP - 6Reel    Enhancement Trenchfet
IRLHS6342TR2PBF


MOSFET MOSFT 30V 8.5A 15.5mOhm 2.5V cpbl
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Infineon 0
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AUD 0.4735

Multiples of: 1

8.7 A30 V15.5 mOhmsn - channel12 V - 55 C+ 150 C2.1 Wsmd/smtPQFN - 6Reel   11 nCenhancement  
IRF7604TRPBF


MOSFET MOSFT PCh -20V -3.6A 90mOhm 13nC Micro 8
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Infineon 0
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AUD 0.4735

Multiples of: 1

- 3.6 A- 20 V90 mOhmsp - channel12 V - 55 C+ 150 C1.8 Wsmd/smtMICRO - 8Reel   13 nCenhancement  
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