MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP83T03GM-HF-VB


30V 18A 1PCSNChannel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.4441
Multiples of: 1

                   
SM3455PSQGC-TRG


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Sinopower 0
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AUD 0.4442
Multiples of: 1

                   
LNF10N60


MOSFET N Trench 600V 10A 4V @ 250uA 900 mΩ @ 5A,10V TO-262 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Lonten Semiconductor 0
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AUD 0.4444
Multiples of: 1

                   
IRF7807ZTRPBF


MOSFET N Trench 30V 11A 2.25V @ 250uA 13.8 mΩ @ 11A,10V SOIC-8_150mil RoHS
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Infineon 0
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AUD 0.4445
Multiples of: 4000

11 A30 V18.2 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V7.2 nC   
IRFR120NPBF


Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
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Infineon 0
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AUD 0.4445
Multiples of: 75

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKTube       
SSU1N60BTU-WS


MOSFET N-Ch 600V 0.9A 12Ohm
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ON Semiconductor 0
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AUD 0.4445
Multiples of: 70

900 mA600 V12 OhmsN - Channel     Through HoleTO - 251 - 3TubeSi1 Channel     
IRFHM9331TRPBF


MOSFET P Trench 30V 11A 2.4V @ 25uA 10 mΩ @ 11A,20V PQFN 3x3 RoHS
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Infineon 0
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AUD 0.4447
Multiples of: 1

11 A30 V11.7 mOhmsP - Channel 1.8 V- 55 C+ 150 C2.8 WSmd/SmtPQFN - 8ReelSi1 Channel25 V16 nCEnhancement  
HD70N08


MOSFET N Trench 80V 70A (Tc) 4V @ 250uA 10 mΩ @ 40A,10V TO-252-2 (DPAK) RoHS
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Haolin 0
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AUD 0.4449
Multiples of: 1

                   
RUR040N02HZGTL


MOSFET NCH 20V 4A SMALL SIGNAL MOSFET
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ROHM 0
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AUD 0.4449
Multiples of: 1

4 A20 V35 mOhmsN - Channel 1.3 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 6Cut TapeSi1 Channel10 V8 nCEnhancementAec - Q101 
IRFR110TRPBF-VB


100V 15A 114mΩ@10V 1PCSNChannel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.4449
Multiples of: 1

                   
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