MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD13202Q2


N-Channel 12 V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
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Texas Instruments 2584
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AUD 0.3587
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14.4 A12 V9.3 mOhmsN - channel8 V800 mV- 55 C+ 150 C2.7 WSmd/smtWSON - 6 FETReelSi1 Channel4.5 V5.1 nCDepletion Nexfet
SP010N08GTD


TO-263-3L MOSFETs ROHS
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Siliup 756
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AUD 0.3572
Multiples of: 5

                   
TPY65R1K5MB


MOSFET SOT-223-2L RoHS
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UNIGROUP 0
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AUD 0.3711
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IRF7301TRPBF


MOSFET 2 N Channel (Dual) 20V 5.2A 700mV @ 250uA 50 mΩ @ 2.6A,4.5V SO-8_3.9mm RoHS
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Infineon 0
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AUD 0.3711
Multiples of: 4000

5.2 A20 V50 mOhmsN - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel12 V13.3 nC   
IRF7726TRPBF


Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
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Infineon 0
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AUD 0.3711
Multiples of: 4000

7 A30 V26 mOhmsP - Channel  - 55 C+ 150 C1.79 WSmd/SmtMICRO - 8ReelSi1 Channel20 V46 nCEnhancement  
SQSA84CENW-T1_GE3


MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET W, 32 mO 10V, 37 mO 4.5V
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Vishay 0
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AUD 0.3711
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16 A80 V32 mOhms , 37 mOhmsN - Channel 2 V- 55 C+ 175 C27 WSMD/SMTPowerpak1212 - 8WReel , Cut TapeSi1 Channel- 20 V , + 20 V14.1 nC   
BSC080N03LS G-HXY


30V 70A 5.7m@10V,30A 59W 2.5V@250uA 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 0
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AUD 0.3711
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SI3850ADV-T1-E3


MOSFET 20V 1.40.96A
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Vishay 0
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AUD 0.3715
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1.4 A20 V300 mOhms , 640 mOhmsn - channel, p - channel12 V - 55 C+ 150 C1.06 Wsmd/smtTSOP - 6Reel    enhancement  
TPN7R504PL,LQ


MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ
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Toshiba 0
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AUD 0.372
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68 A40 V7.5 mOhmsN - Channel 1.4 V + 175 C61 WSmd/SmtTSON - 8Cut TapeSi1 Channel20 V24 nCEnhancement U - Mosix - H
ZXMN10A07F


Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23
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Diodes Incorporated 0
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AUD 0.372
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