MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQJ0306FQDQA#H6


MOSFET, P CH, 30V, 3A, SC-59A
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AUD 0.3481
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   P Channel               
RQJ0202VGDQA#H6


MOSFET, P CH, 20V, 2.7A, SC-59A
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AUD 0.3481
Multiples of: 1

   P Channel               
RQK0202RGDQA#H6


MOSFET, N CH, 20V, 3.8A, SC-59A
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AUD 0.3481
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   N Channel               
SVD2955-HXY


60V 10A 125m 1PCSPChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.3482
Multiples of: 5

                   
G1007


MOSFET N Trench 100V 7A (Tc) 2.6V @ 250uA 85 mΩ @ 4.5A,10V SOP-8_150mil RoHS
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GOFORD 0
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AUD 0.3482
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HSU6903


MOSFET N & P Channel 60V,-60V 20A,-12A 2.5V @ 250uA 40mO @ 15A,10V,100mO @ 10A,10V TO-252-4 RoHS
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HUASHUO 0
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AUD 0.3482
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VS3698AP


PDFN5x6 MOSFETs ROHS
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Vanguard 0
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AUD 0.3483
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FDG313N


MOSFET SC70-6 N-CH 25V
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ON Semiconductor 0
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AUD 0.3484
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950 mA25 V350 mOhmsn - channel  - 55 C+ 150 C750 mWsmd/smtSC - 70 - 6Reelsi1 channel8 V enhancement  
BSZ105N04NS G


Infineon Technologies MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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AUD 0.3484
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11 A40 V10.5 mOhmsn - channel  - 55 C+ 150 C2.1 Wsmd/smtTSDSON - 8Reelsi1 channel20 V enhancement optimos
SVD5867NLT4G


MOSFET NFET DPAK 60V 18A 43MOHM
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ON Semiconductor 0
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AUD 0.3485
Multiples of: 2500

22 A60 V39 mOhmsN - Channel 1.5 V- 55 C+ 175 C43 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V15 nCEnhancementAEC - Q101 
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