MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN10H170SVTQ-7


MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
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Diodes Incorporated 0
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AUD 0.3252
Multiples of: 1

2.6 A100 V115 mOhmsN - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V9.7 nCEnhancementAec - Q101 
DMT5015LFDF-13


MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
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Diodes Incorporated 0
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AUD 0.3254
Multiples of: 10000

9.1 A50 V15 mOhmsn - channel 2 V- 55 C+ 150 C1.9 Wsmd/smtU - DFN2020 - F - 6Reelsi1 channel16 V6.1 nCenhancement  
PMT21EN


MOSFET, N CH, 30V, 7.4A, SOT223
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Nexperia 0
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AUD 0.3255
Multiples of: 1

   N Channel               
UT60N03L-TN3-R


MOSFET N Trench 30V 60A 3V @ 250uA 23 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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Unisonic 0
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AUD 0.3255
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FIR4N65LG


MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.8 Ω @ 2A,10V TO-252-2 (DPAK) RoHS
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AUD 0.3255
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BSL308C L6327


MOSFET P/N-Channel -/+30V MOSFET
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Infineon 0
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AUD 0.3257
Multiples of: 1

2.3 A , 2 A30 V88 mOhms , 67 mOhmsn and p - channel 1.6 v , 1.5 V- 55 C+ 150 C500 mW (1/2 w)smd/smtTSOP - 6Reelsi2 channel20 V- 5 nC , 1.5 nCenhancement  
SISA72DN-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.3257
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60 A40 V3.5 mOhmsN - Channel 1.1 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 16 V , 20 V41.5 nCEnhancement TrenchFET, PowerPAK
SI9434BDY-T1-E3-VB


SOP-8 MOSFETs ROHS
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AUD 0.3257
Multiples of: 5

                   
IRF7404QTRPBF-VB


20V 1PCSPChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3257
Multiples of: 5

                   
IRF9392TRPBF-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3257
Multiples of: 5

                   
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