MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RU6035M3


DFN-EP(3x3) MOSFETs ROHS
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Ruichips 0
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AUD 0.2949
Multiples of: 1

                   
IRLL014TRPBF


N-Channel 60 V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 0
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AUD 0.295
Multiples of: 2500

2.7 A60 V200 mOhmsN - Channel 1 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel5 V8.4 nCEnhancement  
PXN7R7-60QLAJ


MOSFETs N-channel 60 V, 7.7 mOhm, logic level Trench MOSFET in MLPAK33
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 0.2951
Multiples of: 1

62 A60 V7.7 mOhmsN - Channel 2.2 V- 55 C+ 150 C59 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V11 nCEnhancement  
PMN25ENEX


MOSFET PMN25ENE SC-74
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Nexperia 0
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AUD 0.2951
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   N Channel               
VSB012N03MS


MOSFET N Trench 30V 38A (Tc) 2.2V @ 250uA 16 mΩ @ 10A,4.5V TDFN3.3X3.3 RoHS
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Vanguard 0
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AUD 0.2951
Multiples of: 1

                   
G86N06K


MOSFET N Trench 60V 68A (Tc) 4V @ 250uA 8.4 mΩ @ 4A,10V TO-252 RoHS
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GOFORD 0
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AUD 0.2951
Multiples of: 5

                   
IRF540N


100V 35A 25m@10V,12A 70W 2.3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Minos 0
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AUD 0.2952
Multiples of: 5

                   
SI1563DH-T1-E3


MOSFET 20V 1.281.0A 16
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AUD 0.2952
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1.13 A20 V280 mOhms , 490 mOhmsN - Channel, P - Channel8 V - 55 C+ 150 C570 mWSmd/SmtSOT - 363 - 6Reel    Enhancement Trenchfet
SI1307DL-T1-E3


MOSFET 12V 0.91A
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Vishay 0
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AUD 0.2952
Multiples of: 1

910 mA- 12 V290 mOhmsP - Channel8 V - 55 C+ 150 C290 mWSmd/SmtSOT - 323 - 3Reel    Enhancement Trenchfet
TP0101K-T1-E3


MOSFET 20V 0.58A 0.65Ohm
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Vishay 0
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AUD 0.2952
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- 580 mA- 20 V420 mOhmsp - channel8 V - 55 C+ 150 C350 mWsmd/smtSOT - 23 - 3Reel    enhancement trenchfet
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