MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP10H400SEQ-13


MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.2767

Multiples of: 2500

2.3 A100 V300 mOhmsP - Channel 3 V- 55 C+ 150 C13.7 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V17.5 nCEnhancementAec - Q101 
SI3457BDV-T1-E3


MOSFET RECOMMENDED ALT 781-SI3457CDV-GE3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.2768

Multiples of: 1

           -       
SI1563EDH-T1-E3


MOSFET 20V 1.281.0
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Vishay 0
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AUD 0.2768

Multiples of: 1

1.28 A20 V490 mOhmsn - channel, p - channel12 V - 55 C+ 150 C570 mWsmd/smtSOT - 363 - 6Reel   0.65 nC , 1.2 nCenhancement trenchfet
GT110N06S


60V 14A 10mΩ@10V,14A 3.1W 1.6V@250uA 54pF@25V N Channel 1300pF@25V 24nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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GOFORD 0
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AUD 0.2769

Multiples of: 5

                   
GT60N10


TO-220 MOSFETs ROHS
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AUD 0.2769

Multiples of: 5

                   
DMN3028LQ-7


MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K
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Diodes Incorporated 0
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AUD 0.277

Multiples of: 5

                   
VS3610AE


MOSFET N Trench 30V 64A 2.5V @ 250uA 7 mΩ @ 16A,4.5V PDFN3333 RoHS
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Vanguard 0
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AUD 0.2771

Multiples of: 1

                   
IRFR3709ZTRPBF-HXY


30V 80A 54W 5m@10V,20A 2.5V@250uA 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.2771

Multiples of: 5

                   
CET6426


MOSFET N Trench 60V 5A 3V @ 250uA 75 mΩ @ 3A,10V SOT-223 RoHS
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Chino-Excel 0
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AUD 0.2773

Multiples of: 1

                   
SSM3J117TU,LF


MOSFET Vds=-30V Id=-2A 3Pin
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Toshiba 0
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AUD 0.2773

Multiples of: 3000

- 2 A- 30 V225 mOhmsp - channel - 1.2 V- 55 C+ 150 C800 mWsmd/smtSOT - 23 - 3Reelsi1 channel+/- 20 V enhancement  
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