MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2333DDS-T1-BE3


MOSFET P-CHANNEL 12-V (D-S)
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AUD 0.2635
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6 A12 V23 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V9 nCEnhancement  
KMA3D0N20SA-RTK/P


MOSFET N Trench 20V 3A 1.5V @ 250uA 55 mΩ @ 2.5A,4.5V SOT-23 (SOT-23-3) RoHS
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KEC 0
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AUD 0.2636
Multiples of: 1

                   
FHU100N03B


30V 100A 5.6mO@10V,20A 44.6W N Channel TO-251 MOSFETs ROHS
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AUD 0.2636
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PD636BA


TO-252-2 MOSFETs ROHS
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AUD 0.2636
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SI1905DL-T1-E3


MOSFET 8V 0.6A
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AUD 0.2637
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600 mA- 8 V600 mOhmsP - Channel8 V - 55 C+ 150 C270 mWSmd/SmtSOT - 363 - 6Reel    Enhancement Trenchfet
SI1903DL-T1-E3


MOSFET 20V 0.44A
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AUD 0.2637
Multiples of: 1

440 mA- 20 V995 mOhmsP - Channel12 V - 55 C+ 150 C270 mWSmd/SmtSOT - 363 - 6Reel    Enhancement Trenchfet
SI1539DL-T1-E3


MOSFET 30 0.630.45
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AUD 0.2637
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630 mA30 V410 mOhms , 800 mOhmsN - Channel, P - Channel20 V - 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Reel    Enhancement Trenchfet
SI2351DS-T1-E3


MOSFET 20V 3.0A 2.1W
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AUD 0.2637
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2.2 A- 20 V115 mOhmsP - Channel12 V - 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Reel    Enhancement  
SI1972DH-T1-E3


MOSFET DUAL N-CH 30V(D-S)
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AUD 0.2637
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1.3 A30 V190 mOhmsn - channel20 V - 55 C+ 150 C740 mWsmd/smtSOT - 363 - 6Reel    enhancement  
SI3441BDV-T1-E3


MOSFET 20V 2.9A 0.09Ohm
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AUD 0.2637
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2.45 A- 20 V90 mOhmsp - channel8 V - 55 C+ 150 C860 mWsmd/smtTSOP - 6Reel    enhancement trenchfet
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First...38013802380338043805...

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