MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
19N10L-TN3-R


MOSFET N Trench 100V 15.6A 4V @ 250uA 100 mΩ @ 7.8A,10V TO-252-2 (DPAK) RoHS
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Unisonic 4
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AUD 0.3192
Multiples of: 5

                   
HN2199


40V 20A 42mΩ@10V 2.5V 1PCSN-Channel&1PCSP-Channel DFN5x6-8L MOSFETs ROHS
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HXY MOS 0
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AUD 0.2372
Multiples of: 1

                   
RUE002N05TL


ROHM Semiconductor MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN
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ROHM 0
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AUD 0.2373
Multiples of: 1

200 mA50 V1.6 Ohmsn - channel 1 V  150 mWsmd/smtSOT - 416 - 3Reelsi1 channel8 V    
SI1489EDH-T1-GE3


Vishay Semiconductors MOSFET -8V -2A 2.8W
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Vishay 0
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AUD 0.2373
Multiples of: 3000

2 A- 8 V48 mOhmsp - channel 350 mV- 55 C+ 150 C2.8 Wsmd/smtSOT - 363 - 6Reelsi1 channel5 V10.5 nCenhancement trenchfet
AGMH10P15D


TO-252 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.2374
Multiples of: 5

                   
NCE6080K-ES


60V 48A 114W 6m@10V,30A 2V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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ElecSuper 0
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AUD 0.2374
Multiples of: 5

                   
SI1551DL-T1-E3


MOSFET 20V 0.30.44
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Vishay 0
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AUD 0.2375
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300 mA20 V1.9 Ohms , 995 mOhmsN - Channel, P - Channel12 V - 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Reel    Enhancement Trenchfet
PXN011-60QLAJ


MOSFETs N-channel 60 V, 11 mOhm, logic level Trench MOSFET in MLPAK33
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Nexperia 0
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AUD 0.2375
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46 A60 V11 mOhmsN - Channel 2.2 V- 55 C+ 150 C47 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.8 nCEnhancement  
1N60L-TM3-T


MOSFET N Trench 600V 1.2A (Tc) 4V @ 250uA 11.5 Ω @ 600mA,10V TO-251 (I-PAK) RoHS
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Unisonic 0
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AUD 0.2376
Multiples of: 1

                   
PK6D0BA


DFN-8-EP(6.1x5.2) MOSFETs ROHS
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NIKO 0
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AUD 0.2376
Multiples of: 1

                   
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