MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 2410
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AUD 0.5761
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3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
DMC2025UFDB-7


MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 0
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AUD 0.2496
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6 A , 3.5 A20 V25 mOhms , 75 mOhmsN - Channel, P - Channel 500 mV , 1.4 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - 6Cut TapeSi2 Channel10 v , 8 V12.3 nC , 8.8 nCEnhancement  
HN4K03JUTE85LF


MOSFET N-Ch Sm Sig FET 0.1A 120V 10V VGSS
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Toshiba 0
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AUD 0.2333
Multiples of: 3000

100 mA20 V8 Ohmsn - channel 1.5 V  200 mWsmd/smtSOT - 353 - 5Reel 2 channel     
FJ4B01110L1


MOSFET ULT SM CSP SNGL P-CH MOSFET 0.6x0.6x0.1mm
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Panasonic 0
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AUD 0.2334
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2.6 A12 V153 mOhmsP - Channel 300 mV- 40 C+ 85 C1.1 WSmd/SmtALGA - 4Cut TapeSi1 Channel- 4.5 V3.3 nCDepletion  
AGM3015A


30V 136A 63W 1.3m@10V,20A 1.6V@250uA 1PCSNChannel PDFN5x6 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.2334
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HU100N03


TO-251 MOSFETs ROHS
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Haolin 0
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AUD 0.2334
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CMLDM8120G TR


MOSFET P-Ch Enh FET 20VDS 8.0VGS
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Central Semiconductor 0
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AUD 0.2335
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860 mA20 V240 mOhmsp - channel 760 mV- 65 C+ 150 C350 mWsmd/smtSOT - 563Reelsi 8 V3.56 nCenhancement  
SIRA18DDP-T1-GE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 0
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AUD 0.2335
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           Reel , Cut TapeSi      
CJBE5005


MOSFET 2 N Channel(Double)Common Drain 20V 10A 1V @ 250uA 11.5mO @ 5A,4.5V DFNWB3x3-8L-K RoHS
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Changjing Electronics Technology 0
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AUD 0.2336
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AONS21321-HXY


30V 50A 9m 1PCSPChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 0
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AUD 0.2339
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