MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG6968UQ-7


MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 567
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between Mon. 14 Sep to Thu. 17 Sep Calender.png

AUD 0.3206
Multiples of: 5

6.5 A20 V21 mOhmsN - Channel 900 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V8.5 nCEnhancementAec - Q101 
DMP3130LQ-7


MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101
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Diodes Incorporated 29
Ships to you
between Mon. 14 Sep to Thu. 17 Sep Calender.png

AUD 0.3998
Multiples of: 5

3.5 A30 V150 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V12 nCEnhancementAec - Q101 
IRLML2402PBF


MOSFET, N, LOGIC, SOT-23
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.187
Multiples of: 1

   N Channel               
NX1029X


MOSFET, AECQ101, N AND P-CH, 60V, SOT666
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Nexperia 0
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AUD 0.187
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   N And P Channel               
SM2605PSCC-TRG


MOSFET SOT23-6 RoHS
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Sinopower 0
6 to 16 Weeks Calender.png

AUD 0.1871
Multiples of: 5

                   
BUK7880-55/CUF


MOSFET N-channel TrenchMOS standard level FET
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.1871
Multiples of: 1

7.5 A55 V65 mOhmsn - channel 2 V- 55 C+ 150 C8.3 Wsmd/smtSOT - 223 - 3Reelsi1 channel16 V enhancement  
SQ2318CES-T1_GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 0
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AUD 0.1872
Multiples of: 1

7 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel- 20 V , + 20 V8.9 nCEnhancement  
BSL806N-VB


20V 22m@4.5V 2.2V 2 N-Channel SOT-23-6 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.1872
Multiples of: 5

                   
AP15P06D


TO-252-3 MOSFETs ROHS
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APM Microelectronics 0
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AUD 0.1873
Multiples of: 5

                   
RTF025N03


20V 4A 36mO@10V,4A N Channel SC-70-3 MOSFETs ROHS
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VBsemi Elec 0
6 to 16 Weeks Calender.png

AUD 0.1873
Multiples of: 5

                   
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