MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP89,115


N-Channel 240 V 375mA (Ta) 1.5W (Ta) Surface Mount SOT-223
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.155
Multiples of: 1000

375 mA240 V2.8 OhmsN - Channel20 V - 55 C+ 150 C1.5 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V Enhancement  
2N7002VC-7


MOSFET Dual N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.155
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 563 - 6Reel       
DMN10H220LQ-13


MOSFETs MOSFET BVDSS: 61V-100V SOT23 T&R 10K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.155
Multiples of: 5

                   
SSM3K16FU(TE85L,F)


Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
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Toshiba 0
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AUD 0.1551
Multiples of: 5

   N Channel               
PMDXB950UPELZ


MOSFET PMDXB950UPEL/DFN1010B-6/REEL 7
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.1552
Multiples of: 5000

           Cut TapeSi      
PMCXB900UELZ


MOSFET PMCXB900UEL/DFN1010B-6/REEL 7
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.1552
Multiples of: 5000

           Cut TapeSi      
VS3633GE


PDFN3333 MOSFETs ROHS
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Vanguard 0
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AUD 0.1552
Multiples of: 5

                   
DMN3033LSN


30V 6.5A 30mO@10V,6.5A N Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.1552
Multiples of: 5

                   
DMN5L06TK-7


Diodes Incorporated MOSFET .15W 50V .28A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.1554
Multiples of: 3000

280 mA50 V2 OhmsN - Channel20 V - 55 C+ 150 C150 mWSmd/SmtSOT - 523 - 3Reel    Enhancement  
PMV88ENEAR


MOSFET PMV88ENEASOT23TO-236AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.1554
Multiples of: 3000

2.2 A60 V117 mOhmsN - Channel 1.3 V- 55 C+ 175 C1.26 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V4 nCEnhancementAec - Q101 
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