MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2014LHAB-7


Diodes Incorporated MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF
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Diodes Incorporated 276
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AUD 0.2799
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9 A20 V13 mOhmsN - Channel12 V0.71 V- 55 C+ 150 C1.7 WSmd/SmtU - DFN2030 - 6ReelSi2 Channel12 V16 nCEnhancement  
SIF2N65F


TO-252 MOSFETs ROHS
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SI 0
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AUD 0.1456
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FDY3000NZ


Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
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ON Semiconductor 0
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AUD 0.1456
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            Powertrench®      
SSM3J135TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+-8V ID=-3.0A RDSON=0.103Ohm @ 4.5V in UFM package
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Toshiba 0
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AUD 0.1457
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3 A20 V103 mOhmsP - Channel - 1 V- 55 C+ 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel8 V4.6 nCEnhancement U - Mosvi
AS3416E


MOSFET N Trench 20V 6.5A 1V @ 250uA 22 mΩ @ 6.5A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 0
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AUD 0.1457
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SDM45AN03D


TO-252 MOSFETs ROHS
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SINEDEVICE 0
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AUD 0.1457
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DMN2053UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 0
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AUD 0.146
Multiples of: 5

4.6 A20 V35 mOhmsN - Channel 0.4 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel12 V3.6 nCEnhancement  
PT4936


MOSFET 2 N Channel(Double) 30V 5.8A(Tc) 2.5V @ 250uA 31mO @ 5.8A,10V SOP-8 RoHS
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PUOLOP 0
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AUD 0.1461
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CJMNP517


MOSFET DFNWB2x2-6L-U RoHS
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Changjing Electronics Technology 0
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AUD 0.1461
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HSCS2052


MOSFET 2 N Channel(Double) 24V 6A 1.2V @ 250uA 45mO @ 1.5A,4.5V WLCSP-4 RoHS
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HUASHUO 0
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AUD 0.1461
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