MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6140LQ-7


MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 13007
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between Fri. 11 Sep to Wed. 16 Sep Calender.png

AUD 0.1416
Multiples of: 5

1.6 A60 V92 mOhmsN - Channel 1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V8.6 nCEnhancementAec - Q101 
BSD314SPE L6327


MOSFET P-Channel -30V MOSFET
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Infineon 0
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AUD 0.138
Multiples of: 1

1.5 A30 V140 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi1 Channel20 V- 2.9 nC   
PMV28UN


MOSFET, N CH, 20V, 3.3A, SOT23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NXP 0
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AUD 0.138
Multiples of: 1

   n channel               
CJQ4435


MOSFET P Trench 30V 9.1A 3V @ 250uA 24 mΩ @ 9.1A,10V SOP-8_150mil RoHS
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Changjing Electronics Technology 0
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AUD 0.138
Multiples of: 5

                   
CSD17382F4


MOSFET 30-V, N channel NexFET power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Texas Instruments 0
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AUD 0.1383
Multiples of: 3000

2.3 A30 V180 mOhmsn - channel 700 mV- 55 C+ 150 C500 mWsmd/smtQFN - 3Reelsi1 channel10 V2.1 nCenhancement picostar
AP2307GN-HF


MOSFET P Trench 16V 4 (Ta) 1V @ 250uA 60 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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APEC 0
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AUD 0.1385
Multiples of: 5

                   
MCH6344-TL-W


MOSFET PCH 4V Power MOSFET
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ON Semiconductor 0
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AUD 0.1387
Multiples of: 1

- 2 A- 30 V292 mOhmsp - channel - 2.6 V- 55 C+ 150 C800 mWsmd/smtSC - 88 - 6Reelsi1 channel+/- 20 V3.9 nCenhancement  
ZXMN10A07F-HXY


100V 3A 210m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 0
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AUD 0.1388
Multiples of: 5

                   
MCH3475-TL-W


MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 0.1389
Multiples of: 1

1.8 A30 V135 mOhmsn - channel 1.2 V + 150 C800 mWsmd/smtSOT - 323 - 3Cut Tapesi1 channel20 V2 nCenhancement  
BF5030WH6327XTSA1


Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT
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Infineon 0
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AUD 0.1389
Multiples of: 5

                   
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