MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMZ290UNE2


MOSFET, N-CH, 20V, 1.2A, SOT883-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.0887

Multiples of: 1

   N Channel               
RU3415B


SOT-23 MOSFETs ROHS
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Ruichips 0
6 to 16 Weeks Calender.png

AUD 0.0887

Multiples of: 5

                   
TQM84KDCU6 RFG


MOSFETs -60V, -0.17A, Dual P-Channel Small-signal MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 0
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AUD 0.1166

Multiples of: 1

170 mA60 V7 OhmsP - Channel 2.5 V- 55 C+ 150 C320 mWSMD/SMTSOT - 363 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
XSM6J372NW,LXHF


MOSFETs P-ch MOSFET, -30 V, -6.0 A, 0.042Ohma.10V, DFN2020B(WF)Automotive
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Toshiba 0
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AUD 0.0887

Multiples of: 1

24 A30 V144 mOhmsP - Channel 1.2 V + 150 C3.3 WSMD/SMTDFN2020B - 6Reel , Cut TapeSi1 Channel- 12 V , 6 V8.2 nCEnhancement  
BSS806NEH6327-HXY


20V 3A 43m@4.5V,2.8A 900mW 1.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 0
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AUD 0.0887

Multiples of: 5

                   
SI1013X-T1-GE3-HXY


20V 700mA 260m 1PCSPChannel SOT-523 MOSFETs ROHS
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HXY MOS 0
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AUD 0.0887

Multiples of: 5

                   
PMDXB550UNEZ


NXP Semiconductors MOSFET 30V Dual N-Channel Trench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 0.0888

Multiples of: 5000

590 mA30 V670 mOhmsN - Channel 450 mV- 55 C+ 150 C4.03 WSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 V1.05 nCEnhancement  
DMG6301UDW-7


MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.0891

Multiples of: 3000

240 mA25 V3.8 OhmsN - Channel 850 mV- 55 C+ 150 C370 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel8 V360 pCEnhancement  
DMB53D0UDW-7


MOSFET N-CHANNEL NPN ENHANCEMENT MODE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.0891

Multiples of: 3000

   n - channel  - 55 C+ 150 C smd/smtSOT - 363Reel       
SI8461DB-T2-E1


P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.0891

Multiples of: 1

   p - channel  - 40 C+ 85 C smd/smtMICRO - FOOT - 4Reel       
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