MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMDPB55XP,115


NXP Semiconductors MOSFET 20V, Dual P-Channel Trench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 1
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AUD 0.3984
Multiples of: 1

- 4.5 A- 20 V55 mOhmsP - Channel - 0.65 V- 55 C+ 150 C8.3 WSmd/SmtDFN - 2020 - 6ReelSi2 Channel 16.5 nCEnhancement  
NTK3134NT5G


Trans MOSFET N-CH 20V 0.89A 3-Pin SOT-723 T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.0755
Multiples of: 8000

890 mA20 V200 mOhmsN - Channel  - 55 C+ 150 C310 mWSmd/SmtSOT - 723 - 3Reel 1 Channel6 V Enhancement  
PMH550UPEH


MOSFET PMH550UPEH
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Nexperia 0
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AUD 0.0755
Multiples of: 1

800 mA20 V640 mOhmsP - Channel 950 mV- 55 C+ 150 C660 mWSMD/SMTDFN0606 - 3Cut Tape , Reel , ReelSi1 Channel- 8 V , + 8 V600 pCEnhancement  
AP6802


30V 4A 31mΩ@20V,4A 2 N-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 0
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AUD 0.0755
Multiples of: 10

                   
FK3906010L


MOSFET SM SIG MOS FET FLT LD 1.6x1.6mm
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Panasonic 0
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AUD 0.0756
Multiples of: 1

100 mA60 V15 Ohmsn - channel     smd/smtSS - M in I - 3 - F3 - BReelsi1 channel     
FK3506010L


Panasonic MOSFET NCH MOS FET FLT LD 2.0x2.1mm
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Panasonic 0
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AUD 0.0756
Multiples of: 1

100 mA60 V15 Ohmsn - channel12 V1.2 V- 40 C+ 85 C150 mWsmd/smtSC - 85 - 3Reelsi1 channel12 V    
SIHF8N50D-E3


MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
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Vishay 0
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AUD 0.0756
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8.7 A500 V850 mOhmsN - Channel 5 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3 FPBulkSi1 Channel30 V15 nCEnhancement  
DMP22D6UT-HXY


20V 700mA 260m 1PCSPChannel SOT-523 MOSFETs ROHS
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HXY MOS 0
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AUD 0.0756
Multiples of: 5

                   
BSS138W_R1_00001


SOT-323-3 MOSFETs ROHS
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Panjit 0
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AUD 0.0757
Multiples of: 10

                   
SSM3K17FU,LF


N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount USM
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Toshiba 0
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AUD 0.0758
Multiples of: 3000

100 mA50 V20 OhmsN - Channel 900 mV + 150 C150 mWSmd/SmtSOT - 323 - 3-Si1 Channel4 V Enhancement  
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