MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG2305UX-13


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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Diodes Incorporated 24958
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AUD 0.4389
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- 4.2 A- 20 V52 mOhmsP - Channel8 V- 0.9 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Reel   10.2 nCEnhancement  
VB1240B


20V 7A 20mO@4.5V,7A N Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 48
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between Fri. 11 Sep to Wed. 16 Sep Calender.png

AUD 0.0786
Multiples of: 10

                   
FH8818K


20V SOT-23-6 MOSFETs ROHS
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Xinfeihong 0
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AUD 0.0702
Multiples of: 10

                   
STD9HN65M2


MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
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STMicroelectronics 0
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AUD 0.0702
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5.5 A600 V820 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 25 V11.5 nCEnhancement Mdmesh
SSM3J35AFS,LF


MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
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Toshiba 0
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AUD 0.0703
Multiples of: 1

250 mA20 V1.1 OhmsP - Channel 1 V + 150 C500 mW (1/2 w)Smd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V Enhancement  
FDV301N_NB9V005


MOSFET N-Ch Digital Automotive Spec
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ON Semiconductor 0
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AUD 0.0705
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtSOT - 23 - 3Reel       
ZVN3310FTA-VB


100V 1PCSNChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.0706
Multiples of: 5

                   
AS3409


MOSFET P Trench 30V 2.2A 2.4V @ 250uA 130 mΩ @ 2.2A,10V SOT-23 (SOT-23-3) RoHS
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AnBon 0
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AUD 0.0706
Multiples of: 10

                   
SSM3K15ACT(TPL3)


MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS
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Toshiba 0
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AUD 0.0706
Multiples of: 1

100 mA30 V3.6 OhmsN - Channel    100 mWSmd/SmtCST - 3ReelSi1 Channel20 V    
DMN2991UDR4-7R


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1010-6 T&R 5K
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.0707
Multiples of: 1

           Reel , Cut TapeSi      
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