MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM2302CX RF-VB


20V 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 9
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AUD 0.0995
Multiples of: 10

                   
TW1529SJ


SOT-23-3L MOSFETs ROHS
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TWGMC 0
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AUD 0.0679
Multiples of: 5

                   
PMZB420UN,315


MOSFET 30V Single N-channel Trench MOSFET
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NXP 0
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AUD 0.068
Multiples of: 1

900 mA30 V420 mOhmsn - channel 0.7 V- 55 C+ 150 C2.7 Wsmd/smtDFN - 1006B - 3Reel   0.75 nCenhancement  
BSN20Q-7


MOSFET MOSFET BVDSS:
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.068
Multiples of: 3000

500 mA50 V1.3 OhmsN - Channel 400 mV- 55 C+ 150 C920 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V800 pCEnhancementAec - Q101 
DMN2400UFB-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.0744
Multiples of: 3000

750 mA20 V550 mOhmsN - Channel 500 mV- 55 C+ 150 C0.47 mWSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel12 V500 pCEnhancement  
2N7002PT


MOSFET, N CH, 60V, 0.31A, SOT416
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NXP 0
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AUD 0.068
Multiples of: 1

   N Channel               
APM2324A


MOSFET N Channel 20V 3A 1.3V @ 250uA 80mO @ 3.6A,4.5V SC-59 RoHS
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Shikues 0
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AUD 0.0682
Multiples of: 10

                   
EMF50N03JS


MOSFET N Channel 30V 3.5A 1.2V @ 250uA 50mO @ 3.5A,4.5V SOT23 RoHS
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EMC 0
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AUD 0.0682
Multiples of: 1

                   
2N7002F


MOSFET, N CH, 60V, 0.475A, SOT23
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NXP 0
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AUD 0.0682
Multiples of: 1

   N Channel       Cut Tape       
AS3415E


MOSFET SOT-23 RoHS
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AnBon 0
6 to 16 Weeks Calender.png

AUD 0.0684
Multiples of: 10

                   
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