MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOB409L


MOSFET P Trench 60V 31.5A (Tc) 2.4V @ 250uA 38 mΩ @ 20A,10V TO-263 RoHS
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Alpha & Omega 776
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AUD 1.1701
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IRF7458TRPBF


MOSFET N Trench 30V 14A 4V @ 250uA 8 mΩ @ 14A,16V SOIC-8_150mil RoHS
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Infineon 100
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AUD 3.3105
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14 A30 V8 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel30 V39 nCEnhancement  
FQB44N10TM


MOSFET 100V N-Channel QFET
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ON Semiconductor 1
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AUD 1.4612
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43.5 A100 V39 mOhmsn - channel  - 55 C+ 175 C3.75 Wsmd/smtD2PAKReelsi1 channel25 V enhancement  
AOTF450A70L-VB


700V 10A 390mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 1.4685
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AUIRFZ44Z


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms
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Infineon 1
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AUD 1.4694
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51 A55 V13.9 mOhmsN - Channel20 V - 55 C 80 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V29 nCEnhancementAec - Q101 
BUK762R4-60E-VB


60V 270A 2.5m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 1
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AUD 1.4796
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IRFD210PBF


N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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Vishay 1
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AUD 1.4939
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   N Channel      HVMDIP - 4Tube       
IPD90N10S4L-06-VB


100V 6m@10V 2.35V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 1
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AUD 1.5231
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SIRA01DP-T1-GE3


MOSFET N-Ch 150V Vds 16.1nC Qg Typ
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Vishay 1
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AUD 1.5448
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36.8 A150 V19.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V31 nCEnhancement Trenchfet, Powerpak
BSC014N03LS G-VB


30V 1PCSNChannel QFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.5334
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