MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
70N06L-TQ2


60V 60A 12mO@10V,20A 3W N Channel TO-263 MOSFETs ROHS
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VBsemi Elec 1
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AUD 1.0052
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SUD40N10-25


100V 40A 30mO@10V,40A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.9609
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SE100130A


MOSFET N Trench 100V 130A 3V @ 250uA 4 mΩ @ 40A,10V TO-220 RoHS
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SINO-IC 1
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AUD 0.5346
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IRLR2703TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC
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Infineon 1
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AUD 0.9664
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22 A30 V65 mOhmsN - Channel16 V - 55 C+ 175 C38 WSmd/SmtDPAK - 3ReelSi1 Channel16 V10 nCEnhancement  
2SK3667-VB


650V 830m@10V 3.36V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.9762
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12N65-VB TO220F


650V 12A 680m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.9762
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FQPF10N65C-VB


650V 10A 830m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.9762
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NVTFS5C680NLTAG


AFSM T6 60V LL U8FL
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ON Semiconductor 1
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AUD 0.9984
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20 A60 V22 mOhmsN - Channel 1.2 V- 55 C+ 175 C20 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V6 nCEnhancementAec - Q100 
SISA72ADN-T1-GE3


MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8
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Vishay 1
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AUD 1.0008
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94 A40 V3.25 mOhmsN - Channel 1 V- 55 C+ 150 C52 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel- 16 v , 20 V50 nCEnhancement Trenchfet, Powerpak
NCEP12T12D


TO-263 MOSFETs ROHS
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NCE Power 1
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AUD 1.0061
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