MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLL014NTR


MOSFET SOT-223-3 RoHS
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VBsemi Elec 1
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AUD 0.38
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VBA1410


MOSFET N Trench 40V 12A (Tc) 3V @ 250uA 10 mΩ @ 12.4A,10V SO-8 RoHS
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VBsemi Elec 1
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AUD 0.3808
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GT500P10K


100V 30A 45m@10V 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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GOFORD 1
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AUD 0.3861
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NTD20N03L27


30V 50A 7mO@10V,50A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.3863
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CEP6186


MOSFET N Trench 60V 33A (Tc) 3V @ 250uA 25 mΩ @ 19A,10V TO-220 (TO-220-3) RoHS
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Chino-Excel 1
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AUD 0.3941
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SWD050R95E8S


100V 100A 6mΩ TO-252 MOSFETs ROHS
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Sam&wing 1
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AUD 0.3977
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SI7619DN-T1-GE3-HXY


30V 25A 16m 1PCSPChannel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 1
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AUD 0.4002
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TDM3512


MOSFET N Trench 20V 50A (Tc) 1V @ 250uA 3.4 mΩ @ 13.5A,4.5V PPAK-8 RoHS
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Techcode 1
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AUD 0.4014
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CEM4435-VB


30V 9A 18m@10V,9A 1PCSPChannel SO-8 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.4026
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SI3483DDV-T1-GE3


MOSFET P-Channel 30 V D-S MOSFET
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Vishay 1
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AUD 0.4106
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8 A30 V31.2 mOhmsP - Channel - 2.2 V- 55 C+ 150 C3 WSmd/SmtTSOP - 6Cut TapeSi1 Channel- 20 v , 16 V9.5 nCEnhancement Trenchfet
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