MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STF13NK50Z


MOSFET N Ch 600V 0.35 Ohm Zener SuperMESH 10A
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STMicroelectronics 1
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AUD 9.9991
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11 A500 V480 mOhmsn - channel  - 55 C+ 150 C30 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V47 nCenhancement supermesh
NTMFS5C410NLTT1G


MOSFET NFET SO8FL 40V 312A
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ON Semiconductor 1
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AUD 10.5651
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IPW65R037C6-VB


650V 64A 36m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 10.6025
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S2M0080120J


TO-263-7 SiC MOSFETs ROHS
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SMC Diode 1
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AUD 10.9265
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GAN140-650FBEZ


GaN FETs MOS DISCRETES
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Nexperia 1
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AUD 11.3785
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STW48N60M2-4


Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247-4
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STMicroelectronics 1
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AUD 11.6597
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            mdmesh      
NTE2967


Transistor: N-MOSFET; 100V; 70A; TO3P
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NTE 1
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AUD 13.7075
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STW45N60DM6


MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
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STMicroelectronics 1
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AUD 16.4781
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30 A600 V99 mOhmsN - Channel 3.25 V- 55 C+ 150 C210 WThrough HoleTO - 247 - 3 Si1 Channel25 V44 nCEnhancement Mdmesh
IPB100N06S2L05ATMA2


Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
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Infineon 1
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AUD 16.6606
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            Optimos      
STW68N65DM6-4AG


MOSFET Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET
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STMicroelectronics 1
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AUD 20.0362
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72 A650 V39 mOhmsN - Channel 4.75 V- 55 C+ 150 C480 WThrough Hole TubeSi1 Channel- 25 V , + 25 V118 nCEnhancementAEC - Q101MDmesh
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